IGP01N120H2

Mfr. #:: IGP01N120H2
制造商:: Rochester Electronics, LLC
描述:: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
生命周期:: 制造商新产品。
数据表:: IGP01N120H2 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: IGBT - 单

系列: IGP01N120

打包: 管子

部分别名: IGP01N120H2XK IGP01N120H2XKSA1 SP000683036

单位重量: 0.211644 oz

安装方式: 通孔

包装盒: TO-220-3

配置: 单身的

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 1200 V

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 3.2 A

Tags: IGP01, IGP0, IGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP01N120H2 描述

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(3+Tab) TO-220AB

***hard Electronics: Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

***nell: IGBT, N, 1200V, 1.3A, TO-220; DC Collector Current: 3.2A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Power Dissipation Pd: 28W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220; Operating Temp

***ark: IGBT, N, 1200V, 1.3A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:1.3A; Voltage, Vce Sat Max:2.8V; Power Dissipation:28W; Case Style:TO-220; Termination Type:Through ;RoHS Compliant: Yes

Market price

型号	制造商	描述	库存	价格
IGP01N120H2XKSA1 DISTI # IGP01N120H2XKSA1-ND	Infineon Technologies AG	IGBT 1200V 3.2A 28W TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IGP01N120H2 DISTI # SP000683036	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin TO-220AB Tube (Alt: SP000683036) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.0059 10:€0.7849 25:€0.7019 50:€0.6379 100:€0.6199 500:€0.6069 1000:€0.5979
IGP01N120H2	Infineon Technologies AG	Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin RoHS: Compliant	13000	1000:$0.7100 500:$0.7400 100:$0.7700 25:$0.8100 1:$0.8700
IGP01N120H2XKSA1	Infineon Technologies AG	Power Bipolar Transistor, 3.2A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin RoHS: Compliant	20000	1000:$0.7100 500:$0.7400 100:$0.7700 25:$0.8100 1:$0.8700
IGP01N120H2 DISTI # 726-IGP01N120H2	Infineon Technologies AG	IGBT Transistors HIGH SPEED 2 TECH 1200V 1A RoHS: Compliant	134	1:$1.6800 10:$1.3500 100:$1.0300 500:$0.9180 1000:$0.7250 2500:$0.6400 5000:$0.6280 10000:$0.6170
IGP01N120H2XKSA1 DISTI # N/A	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS	0

图片	型号	描述
	Mfr.#: IGP01N120H2XKSA1 OMO.#: OMO-IGP01N120H2XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IGP01N120H2S OMO.#: OMO-IGP01N120H2S-1190	全新原装
	Mfr.#: IGP01N120H2XKSA1 OMO.#: OMO-IGP01N120H2XKSA1-INFINEON-TECHNOLOGIES	IGBT 1200V 3.2A 28W TO220-3
	Mfr.#: IGP01N120H2 OMO.#: OMO-IGP01N120H2-126	IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

IGP01N120H2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes