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IRLU8743PBF

IRLU8743PBF
Mfr. #:
IRLU8743PBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl
生命周期:
制造商新产品。
数据表:
IRLU8743PBF 数据表
交货:
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支付:
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HTML Datasheet:
IRLU8743PBF DatasheetIRLU8743PBF Datasheet (P4-P6)IRLU8743PBF Datasheet (P7-P9)IRLU8743PBF Datasheet (P10-P11)
ECAD Model:
更多信息:
IRLU8743PBF 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-251-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
160 A
Rds On - 漏源电阻：
3.9 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
39 nC
Pd - 功耗：
135 W
配置：
单身的
打包：
管子
高度：
6.22 mm
长度：
6.73 mm
晶体管类型：
1 N-Channel
宽度：
2.38 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SP001573024
单位重量：
0.139332 oz
Tags
IRLU87, IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRLU8743PBF N-channel MOSFET Transistor, 160 A, 30 V, 3-Pin IPAK
***ure Electronics
Single N-Channel 30 V 3.1 mOhm 39 nC HEXFET® Power Mosfet - IPAK
*** Source Electronics
Trans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 30V 160A I-PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***nell
MOSFET, N I-PAK 30V; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipat
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***trelec
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 135 W
***ark
; Transistor Type:MOSFET; Continuous Drain Current, Id:160A; On Resistance, Rds(on):0.0031ohm; Current, Idm pulse:640A; Drain-Source Breakdown Voltage:30V; No. of Pins:3 ;RoHS Compliant: Yes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ment14 APAC
MOSFET, N, LOGIC, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:161A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:140W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:161A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.3V
***i-Key
MOSFET N-CH 30V 160A I-PAK
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 117A 4MOHM
***i-Key
MOSFET N-CH 30V 14.5A IPAK
***el Electronic
RES SMD 470 OHM 1% 1/4W 1206
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:117A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:93.75W ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 30V 35A I-PAK
***ser
MOSFETs 30V N-Channel PowerTrench
***el Nordic
Contact for details
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):4.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A IPAK
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型号 制造商 描述 库存 价格
IRLU8743PBF
DISTI # V99:2348_13890920		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK Tube3046
  • 1:$1.4037
IRLU8743PBF
DISTI # IRLU8743PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 160A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5730In Stock
  • 1050:$0.7425
  • 525:$0.9405
  • 150:$1.2127
  • 75:$1.3860
  • 1:$1.7300
IRLU8743PBF
DISTI # 26198208		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK Tube3046
  • 1000:$0.5605
  • 500:$0.7874
  • 100:$0.8877
  • 13:$1.1278
IRLU8743PBF
DISTI # 31342194		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK Tube691
  • 9000:$0.4386
  • 4500:$0.4463
  • 1950:$0.4617
  • 1050:$0.4799
  • 900:$0.4972
IRLU8743PBF
DISTI # IRLU8743PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRLU8743PBF)
RoHS: Compliant
Min Qty: 900
Container: Tube		Americas - 9675
  • 900:$0.5179
  • 1050:$0.4999
  • 1950:$0.4809
  • 4500:$0.4649
  • 9000:$0.4569
IRLU8743PBF
DISTI # SP001573024		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK (Alt: SP001573024)
RoHS: Compliant
Min Qty: 1		Europe - 4800
  • 1:€0.6899
  • 10:€0.6129
  • 25:€0.5519
  • 50:€0.5009
  • 100:€0.4599
  • 500:€0.4239
  • 1000:€0.3939
IRLU8743PBF
DISTI # 70017986		Infineon Technologies AGMOSFET,N Ch.,30V,160A,3.1 MOHM,39 NC QG,I-PAK,Pb-Free
RoHS: Compliant		0
  • 900:$1.3200
IRLU8743PBF
DISTI # 942-IRLU8743PBF		Infineon Technologies AGMOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl
RoHS: Compliant		3003
  • 1:$1.4800
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6750
  • 2500:$0.5990
IRLU8743PBFInfineon Technologies AGPower Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		300
  • 1000:$0.5900
  • 500:$0.6200
  • 100:$0.6500
  • 25:$0.6800
  • 1:$0.7300
IRLU8743PBF
DISTI # 495760		Infineon Technologies AGMOSFET N-CHANNEL 30V 160A HEXFET IPAK, PK320
  • 5:£1.1860
  • 40:£1.0080
IRLU8743PBF
DISTI # IRLU8743PBF		Infineon Technologies AGN-LogL 30V 160A 135W 0,0031R TO251AA
RoHS: Compliant		840
  • 15:€0.7930
  • 75:€0.5630
  • 300:€0.5030
  • 600:€0.4845
IRLU8743PBFInternational Rectifier 
RoHS: Compliant		Europe - 485
    IRLU8743PBF
    DISTI # C1S327400138563    		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK Tube
    RoHS: Compliant    		510
    • 10:$0.5900
    • 1:$2.4500
    IRLU8743PBF
    DISTI # C1S322000505416    		Infineon Technologies AGTrans MOSFET N-CH 30V 160A 3-Pin(3+Tab) IPAK Tube
    RoHS: Compliant    		691
    • 500:$0.7240
    • 100:$0.8070
    • 50:$0.9600
    • 25:$1.0700
    • 5:$1.4800
    IRLU8743PBF
    DISTI # 1551915    		Infineon Technologies AG 
    RoHS: Compliant    		0
    • 1:$2.3500
    • 10:$2.0000
    • 100:$1.5400
    • 500:$1.3600
    • 1000:$1.0800
    • 2500:$0.9600
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    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    IRLU8743PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.47
    US$1.47
    10
    US$1.26
    US$12.60
    100
    US$0.97
    US$96.80
    500
    US$0.86
    US$428.00
    1000
    US$0.68
    US$675.00
    3000
    US$0.60
    US$1 797.00
    9000
    US$0.58
    US$5 193.00
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