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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| RQA0010VXDQSTLE | Renesas Electronics Corporation | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2000 |
| 图片 | 型号 | 描述 |
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Mfr.#: RQA0010DXTL-E OMO.#: OMO-RQA0010DXTL-E-1190 |
全新原装 |
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Mfr.#: RQA0010VXDQS OMO.#: OMO-RQA0010VXDQS-1190 |
全新原装 |
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Mfr.#: RQA0010VXDQSTL-E OMO.#: OMO-RQA0010VXDQSTL-E-1190 |
全新原装 |
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Mfr.#: RQA0010VXDQSTLE OMO.#: OMO-RQA0010VXDQSTLE-1152 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: RQA0011 OMO.#: OMO-RQA0011-1190 |
全新原装 |
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Mfr.#: RQA0011DNS OMO.#: OMO-RQA0011DNS-1190 |
全新原装 |
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Mfr.#: RQA0011DNSTB-E OMO.#: OMO-RQA0011DNSTB-E-1190 |
全新原装 |
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Mfr.#: RQA0014XXDQSTL-E OMO.#: OMO-RQA0014XXDQSTL-E-1190 |
全新原装 |