CY7C1412KV18-250BZXC

CY7C1412KV18-250BZXC
Mfr. #:
CY7C1412KV18-250BZXC
制造商:
Cypress Semiconductor
描述:
SRAM 36MB (2Mx18) 1.8v 250MHz QDR II SRAM
生命周期:
制造商新产品。
数据表:
CY7C1412KV18-250BZXC 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CY7C1412KV18-250BZXC 更多信息 CY7C1412KV18-250BZXC Product Details
产品属性
属性值
制造商:
赛普拉斯半导体
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
36 Mbit
组织:
2 M x 18
最大时钟频率:
250 MHz
接口类型:
平行线
电源电压 - 最大值:
1.9 V
电源电压 - 最小值:
1.7 V
电源电流 - 最大值:
610 mA
最低工作温度:
0 C
最高工作温度:
+ 70 C
安装方式:
贴片/贴片
包装/案例:
FBGA-165
打包:
托盘
内存类型:
QDR
系列:
CY7C1412KV18
类型:
同步
品牌:
赛普拉斯半导体
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
136
子类别:
内存和数据存储
Tags
CY7C1412KV18-2, CY7C1412K, CY7C1412, CY7C141, CY7C14, CY7C1, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
CY7C1412BV18 36 Mb (2 M x 18) 250 MHz 1.8V QDR-II 2-Word Burst SRAM - FBGA-165
***et Europe
SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray
***i-Key
IC SRAM 36M PARALLEL 165FBGA
***ark
TRAY/Sync SRAMs
Cypress QDR-II DDR-II Sync SRAM
Cypress QDR-II is a high performance, dual-port SRAM memory. QDR-II SRAM offers a maximum speed of 333 MHz, densities up to 144 Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
型号 制造商 描述 库存 价格
CY7C1412KV18-250BZXC
DISTI # CY7C1412KV18-250BZXC-ND
Cypress SemiconductorIC SRAM 36M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray
136In Stock
  • 272:$35.9495
  • 136:$36.9693
  • 50:$42.2102
  • 25:$43.2868
  • 10:$44.8730
  • 1:$48.3900
CY7C1412KV18-250BZXC
DISTI # 2015-CY7C1412KV18-250BZXC-ND
Cypress SemiconductorIC SRAM 36M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray
74In Stock
  • 272:$34.2376
  • 136:$35.2089
  • 50:$40.2002
  • 25:$41.2256
  • 10:$42.7360
  • 1:$46.0800
CY7C1412KV18-250BZXC
DISTI # 727-C1412KV18250BZXC
Cypress SemiconductorSRAM 36MB (2Mx18) 1.8v 250MHz QDR II SRAM
RoHS: Compliant
115
  • 1:$46.0800
  • 5:$43.7300
  • 10:$42.7400
  • 25:$41.2200
  • 50:$40.0100
  • 100:$35.1000
CY7C1412KV18-250BZXCCypress SemiconductorQDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165
RoHS: Compliant
176
  • 1000:$40.8300
  • 500:$42.9800
  • 100:$44.7400
  • 25:$46.6600
  • 1:$50.2500
图片 型号 描述
S29GL512S10FHI010

Mfr.#: S29GL512S10FHI010

OMO.#: OMO-S29GL512S10FHI010

NOR Flash 512Mb 3V 100ns Parallel NOR Flash
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6

TVS Diodes / ESD Suppressors ESD Protection Low Cap
TPS3620-33DGKR

Mfr.#: TPS3620-33DGKR

OMO.#: OMO-TPS3620-33DGKR

Supervisory Circuits 3.3-V Battery-Backup for RAM Retention
MAX3232ECDBR

Mfr.#: MAX3232ECDBR

OMO.#: OMO-MAX3232ECDBR

RS-232 Interface IC 3-5.5V MultiCh Line Driver/Receiver
RN1101,LF(CT

Mfr.#: RN1101,LF(CT

OMO.#: OMO-RN1101-LF-CT

Bipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor
SN74AHC125DR

Mfr.#: SN74AHC125DR

OMO.#: OMO-SN74AHC125DR

Buffers & Line Drivers Tri-State Quad Bus
TPS2041BDBVR

Mfr.#: TPS2041BDBVR

OMO.#: OMO-TPS2041BDBVR

Power Switch ICs - Power Distribution Sgl Ch Crnt-Ltd Pwr Dist Sw
SN74AHC125DR

Mfr.#: SN74AHC125DR

OMO.#: OMO-SN74AHC125DR-TEXAS-INSTRUMENTS

Buffers & Line Drivers Tri-State Quad Bus
EEE-FT1V681UP

Mfr.#: EEE-FT1V681UP

OMO.#: OMO-EEE-FT1V681UP-PANASONIC

CAP ALUM 680UF 20% 35V SMD
RN1101,LF(CT

Mfr.#: RN1101,LF(CT

OMO.#: OMO-RN1101-LF-CT-TOSHIBA-SEMICONDUCTOR-AND-STOR

TRANS PREBIAS NPN 0.1W SSM
可用性
库存:
650
订购:
2633
输入数量:
CY7C1412KV18-250BZXC的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$46.08
US$46.08
5
US$43.73
US$218.65
10
US$42.74
US$427.40
25
US$41.22
US$1 030.50
50
US$40.01
US$2 000.50
100
US$35.10
US$3 510.00
250
US$34.56
US$8 640.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
从...开始
最新产品
Top