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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SIHB11N80E-GE3 DISTI # SIHB11N80E-GE3-ND | Vishay Siliconix | MOSFET N-CH 800V D2PAK TO-263 Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
|
| SIHB11N80E-GE3 DISTI # 78AC6517 | Vishay Intertechnologies | MOSFET, N-CH, 800V, 12A, 150DEG C, 179W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes RoHS: Compliant | 941 |
|
| SIHB11N80E-GE3 DISTI # 78-SIHB11N80E-GE3 | Vishay Intertechnologies | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 867 |
|
| SIHB11N80E-GE3 DISTI # 2932918 | Vishay Intertechnologies | MOSFET, N-CH, 800V, 12A, 150DEG C, 179W RoHS: Compliant | 941 |
|
| SIHB11N80E-GE3 DISTI # 2932918 | Vishay Intertechnologies | MOSFET, N-CH, 800V, 12A, 150DEG C, 179W RoHS: Compliant | 944 |
|
| SIHB11N80E-GE3 DISTI # 2932918RL | Vishay Intertechnologies | MOSFET, N-CH, 800V, 12A, 150DEG C, 179W RoHS: Compliant | 0 |
|
| SIHB11N80E | ISC | D²PAK/TO-263 | 5000 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SIHB12N60ET5-GE3 OMO.#: OMO-SIHB12N60ET5-GE3 |
MOSFET N-Channel 600V |
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Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3-VISHAY |
IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS |
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Mfr.#: SIHB15N60E-GE3-CUT TAPE |
全新原装 |
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Mfr.#: SIHB16N50C-E3 OMO.#: OMO-SIHB16N50C-E3-VISHAY |
MOSFET N-CH 500V 16A D2PAK |
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Mfr.#: SIHB10N40D OMO.#: OMO-SIHB10N40D-1190 |
全新原装 |
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Mfr.#: SIHB10N40D-GE3 OMO.#: OMO-SIHB10N40D-GE3-VISHAY |
MOSFET N-CH 400V 10A DPAK |
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Mfr.#: SIHB12N60EGE3 OMO.#: OMO-SIHB12N60EGE3-1190 |
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: SIHB15N60E OMO.#: OMO-SIHB15N60E-1190 |
全新原装 |
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Mfr.#: SIHB15N60E-GE3 OMO.#: OMO-SIHB15N60E-GE3-VISHAY |
MOSFET N-CH 600V 15A DPAK |
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Mfr.#: SIHB15N65E OMO.#: OMO-SIHB15N65E-1190 |
全新原装 |