SI4920DY-T1-GE3

SI4920DY-T1-GE3
Mfr. #:
SI4920DY-T1-GE3
制造商:
Vishay
描述:
MOSFET 2N-CH 30V 8-SOIC
生命周期:
制造商新产品。
数据表:
SI4920DY-T1-GE3 数据表
交货:
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支付:
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HTML Datasheet:
SI4920DY-T1-GE3 DatasheetSI4920DY-T1-GE3 Datasheet (P4-P6)SI4920DY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
沟槽FETR
打包
卷带 (TR)
包装盒
8-SOIC (0.154", 3.90mm Width)
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
供应商-设备-包
8-SO
FET型
2 N-Channel (Dual)
最大功率
2W
漏源电压 Vdss
30V
输入电容-Ciss-Vds
-
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
25 mOhm @ 6.9A, 10V
Vgs-th-Max-Id
1V @ 250μA (Min)
栅极电荷-Qg-Vgs
23nC @ 5V
Tags
SI4920DY-T, SI4920D, SI4920, SI492, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R
***nell
DUAL N CHANNEL MOSFET, 30V, 6.9A, FULL R
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, 6.9A; Transi; DUAL N CHANNEL MOSFET, 30V, 6.9A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.9A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.02ohm; Rds(on) Test Voltage Vgs:10V
型号 制造商 描述 库存 价格
SI4920DY-T1-GE3
DISTI # SI4920DY-T1-GE3-ND
Vishay SiliconixMOSFET 2N-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4920DY-T1-GE3
    DISTI # 781-SI4920DY-GE3
    Vishay IntertechnologiesMOSFET 30V 6.9A 2.0W 25mohm @ 10V
    RoHS: Compliant
    0
      图片 型号 描述
      SI4920DY-T1-E3

      Mfr.#: SI4920DY-T1-E3

      OMO.#: OMO-SI4920DY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4920DY

      Mfr.#: SI4920DY

      OMO.#: OMO-SI4920DY-1190

      MOSFET SO8 DUAL NCH
      SI4920DY-E3

      Mfr.#: SI4920DY-E3

      OMO.#: OMO-SI4920DY-E3-1190

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4920DY-GE1

      Mfr.#: SI4920DY-GE1

      OMO.#: OMO-SI4920DY-GE1-1190

      全新原装
      SI4920DY-NL

      Mfr.#: SI4920DY-NL

      OMO.#: OMO-SI4920DY-NL-1190

      全新原装
      SI4920DY-T1

      Mfr.#: SI4920DY-T1

      OMO.#: OMO-SI4920DY-T1-1190

      MOSFET 30V 6.9A 2W
      SI4920DY-T1-E3

      Mfr.#: SI4920DY-T1-E3

      OMO.#: OMO-SI4920DY-T1-E3-VISHAY

      MOSFET 2N-CH 30V 8-SOIC
      SI4920DY-T1-GE3

      Mfr.#: SI4920DY-T1-GE3

      OMO.#: OMO-SI4920DY-T1-GE3-VISHAY

      MOSFET 2N-CH 30V 8-SOIC
      SI4920DYT1

      Mfr.#: SI4920DYT1

      OMO.#: OMO-SI4920DYT1-1190

      Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
      SI4920DY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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