BSC196N10NSGATMA1

Mfr. #:: BSC196N10NSGATMA1
制造商:: Infineon Technologies
描述:: MOSFET MV POWER MOS
生命周期:: 制造商新产品。
数据表:: BSC196N10NSGATMA1 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TDSON-8

商品名：: 优化MOS

打包：: 卷轴

高度：: 1.27 mm

长度：: 5.9 mm

宽度：: 5.15 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: BSC196N10NS BSC196N1NSGXT G SP000379604

Tags: BSC196N10NSG, BSC196, BSC19, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC196N10NSGATMA1 描述

***ureElectronics: NChannel100V196mOhmOptiMOS2PowerTransistorPGTDSON8

***ineonSCT: Infineons100VOptiMOSpowerMOSFETsoffersuperiorsolutionsforhighefficiencyhighpowerdensitySMPSPGTDSON8RoHS

***ment14APAC: MOSFETNCH100V45APGTDSON8;TransistorPolarityNChannel;ContinuousDrainCurrentId45A;DrainSourceVoltageVds100V;OnResistanceRdson167mohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd78W;OperatingTemperatureRange55Cto150C;TransistorCaseStylePGTSDSON;NoofPins8;SVHCNoSVHC20Jun2011;CurrentIdMax45A;PowerDissipationPd78W;TransistorTypePowerMOSFET;VoltageVgsMax20V

***ineon: The100VOptiMOSfamilyofferssuperiorsolutionsforhighefficiencyhighpowerdensitySMPSComparedtothenextbesttechnologythisfamilyachievesareductionof30inbothRDSonandFOMfigureofmeritSummaryofFeaturesExcellentswitchingperformance;WorldslowestRDSon;VerylowQgandQgd;ExcellentgatechargexRDSonproductFOM;RoHScomplianthalogenfree;MSL1rated2BenefitsEnvironmentallyfriendly;Increasedefficiency;Highestpowerdensity;Lessparallelingrequired;Smallestboardspaceconsumption;EasytodesignproductsTargetApplicationsSynchronousrectificationforACDCSMPS;Motorcontrolfor48V80Vsystemsiedomesticvehiclespowertoolstrucks;IsolatedDCDCconverterstelecomanddatacomsystems;Oringswitchesandcircuitbreakersin48Vsystems;ClassDaudioamplifiers;UninterruptablepowersuppliesUPS

Market price

型号	制造商	描述	库存	价格
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.4818
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5596 500:$0.7089 100:$0.9141 10:$1.1570 1:$1.3100
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5596 500:$0.7089 100:$0.9141 10:$1.1570 1:$1.3100
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3789 10000:$0.3649 20000:$0.3519 30000:$0.3399 50000:$0.3339
BSC196N10NSGATMA1 DISTI # 60R2519	Infineon Technologies AG	MOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	5000	1:$1.0900 10:$0.9220 100:$0.7090 500:$0.6260 1000:$0.4940
BSC196N10NS G DISTI # 726-BSC196N10NSG	Infineon Technologies AG	MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 RoHS: Compliant	168	1:$1.0900 10:$0.9220 100:$0.7090 500:$0.6260 1000:$0.4940
BSC196N10NSGATMA1 DISTI # 1775474	Infineon Technologies AG	MOSFET, N CH, 100V, 45A, PG-TDSON-8 RoHS: Compliant	5000	1:$1.7300 10:$1.4600 100:$1.1300 500:$0.9910 1000:$0.7820 5000:$0.7730
BSC196N10NSGATMA1 DISTI # 1775474	Infineon Technologies AG	MOSFET, N CH, 100V, 45A, PG-TDSON-8 RoHS: Compliant	5000	5:£0.9010 25:£0.7450 100:£0.6780

图片	型号	描述
	Mfr.#: BSC196N10NS G OMO.#: OMO-BSC196N10NS-G	MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
	Mfr.#: BSC196N10NSGATMA1 OMO.#: OMO-BSC196N10NSGATMA1	MOSFET MV POWER MOS
	Mfr.#: BSC196N10NS OMO.#: OMO-BSC196N10NS-1190	全新原装
	Mfr.#: BSC196N10NS G OMO.#: OMO-BSC196N10NS-G-1190	MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
	Mfr.#: BSC196N10NSG OMO.#: OMO-BSC196N10NSG-1190	全新原装
	Mfr.#: BSC196N10NSGATMA1 OMO.#: OMO-BSC196N10NSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 45A TDSON-8
	Mfr.#: BSC196N10NSGATMA1 , TDZF OMO.#: OMO-BSC196N10NSGATMA1-TDZF-1190	全新原装

BSC196N10NSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes