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IPP60R120P7XKSA1

IPP60R120P7XKSA1
Mfr. #:
IPP60R120P7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命周期:
制造商新产品。
数据表:
IPP60R120P7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPP60R120P7XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
26 A
Rds On - 漏源电阻：
100 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
36 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
95 W
配置：
单身的
频道模式：
增强
商品名：
酷摩
打包：
管子
系列：
CoolMOS P7
晶体管类型：
1 N-Channel
品牌：
英飞凌科技
秋季时间：
6 ns
产品类别：
MOSFET
上升时间：
14 ns
出厂包装数量：
500
子类别：
MOSFET
典型关断延迟时间：
81 ns
典型的开启延迟时间：
21 ns
第 # 部分别名：
IPP60R120P7 SP001647028
单位重量：
0.063493 oz
Tags
IPP60R12, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - TO-220-3
***i-Key
MOSFET N-CH 600V 26A TO220-3
***ical
600V CoolMOS P7 Power Transistor
***ronik
N-CH 600V 26A 120mOhm TO220
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 26A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 26A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:95W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 26A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:26A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:95W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型号 制造商 描述 库存 价格
IPP60R120P7XKSA1
DISTI # IPP60R120P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 26A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		2300In Stock
  • 2500:$1.8318
  • 500:$2.2805
  • 100:$2.6789
  • 25:$3.0912
  • 10:$3.2700
  • 1:$3.6400
IPP60R120P7XKSA1
DISTI # IPP60R120P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R120P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$1.5900
  • 5000:$1.5900
  • 2000:$1.6900
  • 500:$1.7900
  • 1000:$1.7900
IPP60R120P7XKSA1
DISTI # 57AC6815		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes494
  • 500:$2.1900
  • 250:$2.4400
  • 100:$2.5800
  • 50:$2.7100
  • 25:$2.8400
  • 10:$2.9700
  • 1:$3.4900
IPP60R120P7XKSA1
DISTI # 726-IPP60R120P7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		1490
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2500:$1.7400
IPP60R120P7XKSA1
DISTI # 2862303		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-220
RoHS: Compliant		991
  • 1000:$3.0900
  • 500:$3.6600
  • 100:$4.5100
  • 10:$5.5000
  • 1:$6.1600
IPP60R120P7XKSA1
DISTI # 2862303		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-220991
  • 500:£1.6000
  • 250:£1.7700
  • 100:£1.8700
  • 10:£2.1600
  • 1:£2.8500
图片 型号 描述
STPS10150CFP

Mfr.#: STPS10150CFP

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 Schottky Diodes & Rectifiers schottky diode
MAX3471EUA+T

Mfr.#: MAX3471EUA+T

OMO.#: OMO-MAX3471EUA-T-331

 RS-422/RS-485 Interface IC 1.6uA Half Duplex Differential Tcvr
IPP60R099P7XKSA1

Mfr.#: IPP60R099P7XKSA1

OMO.#: OMO-IPP60R099P7XKSA1

 MOSFET HIGH POWER_NEW
STTH310S

Mfr.#: STTH310S

OMO.#: OMO-STTH310S

 Rectifiers 3.0 Amp 1000 Volt
IPP50R190CEXKSA1

Mfr.#: IPP50R190CEXKSA1

OMO.#: OMO-IPP50R190CEXKSA1

 MOSFET N-Ch 500V 18.5A TO220-3
STPS3H100U

Mfr.#: STPS3H100U

OMO.#: OMO-STPS3H100U

 Schottky Diodes & Rectifiers 100V Vrrm 3A IF Schottky Barrier
RC0805FR-079K09L

Mfr.#: RC0805FR-079K09L

OMO.#: OMO-RC0805FR-079K09L

 Thick Film Resistors - SMD 9.09K OHM 1%
0659C6300-12

Mfr.#: 0659C6300-12

OMO.#: OMO-0659C6300-12

 Cartridge Fuses 6.3A, 250V, 5X20MM
IPP60R099P7XKSA1

Mfr.#: IPP60R099P7XKSA1

OMO.#: OMO-IPP60R099P7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 31A TO220-3
1812HA330JAT1A

Mfr.#: 1812HA330JAT1A

OMO.#: OMO-1812HA330JAT1A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 33PF 3KV 5%
可用性
库存:
Available
订购:
1984
输入数量:
IPP60R120P7XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.46
US$3.46
10
US$2.94
US$29.40
100
US$2.55
US$255.00
250
US$2.42
US$605.00
500
US$2.17
US$1 085.00
1000
US$1.83
US$1 830.00
2500
US$1.74
US$4 350.00
5000
US$1.67
US$8 350.00
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