BSM50GB120DN2

Mfr. #:: BSM50GB120DN2
制造商:: Infineon Technologies
描述:: IGBT Modules 1200V 50A DUAL
生命周期:: 制造商新产品。
数据表:: BSM50GB120DN2 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 西门子

产品分类: 模块

产品: IGBT 硅模块

打包: 大部分

安装方式: 拧紧

包装盒: Half Bridge1

配置: 半桥

钯功耗: 400 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.5 V

25-C 时的连续集电极电流: 78 A

栅极-发射极-漏电流: 200 nA

最大栅极发射极电压: 20 V

Tags: BSM50GB120DN2, BSM50GB120DN, BSM50GB120D, BSM50GB120, BSM50GB12, BSM50GB1, BSM50GB, BSM50G, BSM5, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM50GB120DN2 描述

***ser: IGBT - Standard Modules 1200V, 50A, DUAL

***nell: IGBT MODULE, DUAL, 1200V; Transistor type:Series IGBT(Half bridge) + Freewheel Diodes; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:3V; Power dissipation:400W; Case style:Half Bridge 1; Case style, alternate:M34a; Current, Icm pulsed:100A; Power, Pd:400W; Temperature, current:80°C; Termination Type:Screw; Time, fall:100ns; Time, rise:100ns; Voltage, Vceo:1200V

Market price

型号	制造商	描述	库存	价格
BSM50GB120DN2HOSA1 DISTI # V36:1790_18204614	Infineon Technologies AG	BSM50GB120DN2HOSA1	0	10000:$57.2200 5000:$57.2300 1000:$60.7800 100:$70.0100 10:$71.7600
BSM50GB120DN2HOSA1 DISTI # BSM50GB120DN2HOSA1-ND	Infineon Technologies AG	IGBT 2 MED POWER 34MM-1 Min Qty: 10 Container: Tray	Limited Supply - Call	10:$71.7560
BSM50GB120DN2 DISTI # SP000095922	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 78A ±20V Screw Mount (Alt: SP000095922) Min Qty: 1	Europe - 691
BSM 50 GB 120 DN2 DISTI # BSM50GB120DN2	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 78A 7-Pin 34mm (Alt: BSM50GB120DN2) RoHS: Compliant Min Qty: 10	Asia - 0	500:$59.7570 250:$60.5231 100:$61.3091 50:$62.1158 30:$63.7946 20:$65.5667 10:$67.4400
BSM50GB120DN2HOSA1 DISTI # BSM50GB120DN2HOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A nom - Trays (Alt: BSM50GB120DN2HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0
BSM50GB120DN2 DISTI # 641-BSM50GB120DN2	Infineon Technologies AG	IGBT Modules 1200V 50A DUAL RoHS: Compliant	0
BSM50GB120DN2HOSA1 DISTI # XSKDRABV0052102	Infineon Technologies AG	RoHS: Compliant	547 in Stock0 on Order	547:$82.3500 10:$88.2400
BSM50GB120DN2 DISTI # 1496954	Infineon Technologies AG	IGBT MODULE, DUAL, 1200V RoHS: Compliant	0	100:$98.9000 25:$106.7100 10:$108.8500 5:$111.7400 1:$113.8400

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