SIA415DJ-T1-GE3

Name: Vishay - SIA415DJ-T1-GE3
Brand: Vishay
SKU: OMO-2826373
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA415DJ-T1-GE3
制造商:: Vishay
描述:: IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V
生命周期:: 制造商新产品。
数据表:: SIA415DJ-T1-GE3 数据表
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ECAD Model:

产品属性
属性值

制造商: 威世

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SIA415DJ-GE3

安装方式: 贴片/贴片

包装盒: PowerPAKR SC-70-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: PowerPAKR SC-70-6 Single

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 19W

晶体管型: 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 1250pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 35 mOhm @ 5.6A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 47nC @ 10V

钯功耗: 19 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 20 ns

上升时间: 50 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 12 A

Vds-漏-源-击穿电压: - 20 V

Rds-On-Drain-Source-Resistance: 35 mOhms

晶体管极性: P-通道

典型关断延迟时间: 45 ns

典型开启延迟时间: 25 ns

正向跨导最小值: 20 S

通道模式: 增强

Tags: SIA415, SIA41, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA415DJ-T1-GE3 描述

***ure Electronics: SiA415DJ Series P-Channel 20 V 0.035 Ohms SMT Power Mosfet - PowerPAK SC-70-6L

***et: Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R

***ronik: P-CHANNEL-FET12 A 20V PP-SC70-6 RoHSconf

***ment14 APAC: P CHANNEL MOSFET, -20V, 12A, SC-70; Tran; P CHANNEL MOSFET, -20V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-1.5V

Market price

型号	制造商	描述	库存	价格
SIA415DJ-T1-GE3 DISTI # V72:2272_09216827	Vishay Intertechnologies	Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2980	75000:$0.3001 30000:$0.3061 15000:$0.3120 6000:$0.3179 3000:$0.3533 1000:$0.3925 500:$0.4274 250:$0.4869 100:$0.4919 50:$0.5397 25:$0.5603 10:$0.6225 1:$0.7260
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.4004
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	731In Stock	500:$0.5597 100:$0.7217 10:$0.9130 1:$1.0300
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA415DJ-T1-GE3 DISTI # 25790298	Vishay Intertechnologies	Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2980	1000:$0.3937 500:$0.4274 250:$0.4869 100:$0.4919 50:$0.5429 25:$0.5603 20:$0.6225
SIA415DJ-T1-GE3 DISTI # 16P3613	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 12A, SC-70,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.5V RoHS Compliant: Yes	0
SIA415DJ-T1-GE3 DISTI # 781-SIA415DJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70-6L RoHS: Compliant	0
SIA415DJ-T1-GE3 DISTI # C1S803601730428	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2980	100:$0.4919 50:$0.5429 25:$0.5603 10:$0.6225

SIA415DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes