SI8483DB-T2-E1

Name: Vishay - SI8483DB-T2-E1
Brand: Vishay
SKU: OMO-3392159
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8483DB-T2-E1
制造商:: Vishay
描述:: MOSFET P-CH 12V 16A MICROFOOT
生命周期:: 制造商新产品。
数据表:: SI8483DB-T2-E1 数据表
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更多信息:: SI8483DB-T2-E1 更多信息

产品属性
属性值

Tags: SI848, SI84, SI8

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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SI8483DB-T2-E1 描述

***et Japan: Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R

***ure Electronics: MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1

***i-Key: MOSFET P-CH 12V 16A 6MICRO FOOT

***nell: MOSFET, P-CH, 12V, MICROFOOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MICRO FOOT; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SI8483DB-T2-E1 更多信息

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

型号	制造商	描述	库存	价格
SI8483DB-T2-E1 DISTI # V36:1790_09216573	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R RoHS: Compliant	0
SI8483DB-T2-E1 DISTI # V72:2272_09216573	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R RoHS: Compliant	0
SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1CT-ND	Vishay Siliconix	MOSFET P-CH 12V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	78In Stock	1000:$0.2239 500:$0.2898 100:$0.3688 10:$0.4940 1:$0.5800
SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 16A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	78In Stock	1000:$0.2239 500:$0.2898 100:$0.3688 10:$0.4940 1:$0.5800
SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1TR-ND	Vishay Siliconix	MOSFET P-CH 12V 16A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1705 15000:$0.1726 6000:$0.1854 3000:$0.1982
SI8483DB-T2-E1 DISTI # SI8483DB-T2-E1	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8483DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1562 18000:$0.1605 12000:$0.1650 6000:$0.1720 3000:$0.1773
SI8483DB-T2-E1 DISTI # 99W9637	Vishay Intertechnologies	MOSFET Transistor, P Channel, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV	0	50000:$0.1580 30000:$0.1650 20000:$0.1770 10000:$0.1890 5000:$0.2050 1:$0.2100
SI8483DB-T2-E1 DISTI # 63W4156	Vishay Intertechnologies	MOSFET Transistor, P Channel, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV RoHS Compliant: Yes	360	1000:$0.2100 500:$0.2720 250:$0.3010 100:$0.3300 50:$0.3690 25:$0.4070 10:$0.4450 1:$0.5860
SI8483DB-T2-E1. DISTI # 23AC9607	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:13W,No. of Pins:6PinsRoHS Compliant: No	0	50000:$0.1580 30000:$0.1650 20000:$0.1770 10000:$0.1890 5000:$0.2050 1:$0.2100
SI8483DB-T2-E1 DISTI # 78-SI8483DB-T2-E1	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant	0	1:$0.5700 10:$0.4390 100:$0.3260 500:$0.2670 1000:$0.2070 3000:$0.2030
SI8483DB-T2-E1	Vishay Intertechnologies		3000
SI8483DBT2E1	Vishay Intertechnologies	Power Field-Effect Transistor, 16A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3000
SI8483DB-T2-E1	Vishay Intertechnologies	MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 RoHS: Compliant	Americas - 51000
SI8483DB-T2-E1 DISTI # 2283651	Vishay Intertechnologies	MOSFET, P-CH, 12V, MICROFOOT RoHS: Compliant	60	3000:$0.3130 1000:$0.3200 500:$0.4140 100:$0.5030 10:$0.6790 1:$0.8920
SI8483DB-T2-E1 DISTI # 2283651	Vishay Intertechnologies	MOSFET, P-CH, 12V, MICROFOOT	60	500:£0.2110 250:£0.2350 100:£0.2580 25:£0.3690 5:£0.3930

SI8483DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes