SI2307BDS-T1-E3

Mfr. #:: SI2307BDS-T1-E3
制造商:: Vishay
描述:: Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
生命周期:: 制造商新产品。
数据表:: SI2307BDS-T1-E3 数据表
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更多信息:: SI2307BDS-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: 集成电路芯片

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI2307BDS-E3

单位重量: 0.050717 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: TO-236-3, SC-59, SOT-23-3

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: SOT-23-3 (TO-236)

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 750mW

晶体管型: 1 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 380pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 2.5A (Ta)

Rds-On-Max-Id-Vgs: 78 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 15nC @ 10V

钯功耗: 750 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 2.5 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 78 mOhms

晶体管极性: P-通道

典型关断延迟时间: 25 ns

典型开启延迟时间: 9 ns

正向跨导最小值: 5 S

通道模式: 增强

Tags: SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2307BDS-T1-E3 描述

***ied Electronics & Automation: MOSFET; Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W

***ure Electronics: Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23

***ical: Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R

***C: Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23

***eco: P-CH MOSFET SOT-23 30V 78MOHM @ 10V<AZ

***et Europe: Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R

***i-Key: MOSFET P-CH 30V 2.5A SOT23-3

***Components: MOSFET P-Channel 30V 2.5A TO236

***: 30V, 78MOHM @ 10V, SOT-23

***ser: P-Channel MOSFETs 30V 3.2A 1.25W

***ark: P Channel Mosfet, -30V, 2.5A To-236, Full Reel; Transistor Polarity:p Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.063Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3Vrohs Compliant: No

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.25W

***nell: MOSFET, CANALE P, -30V, -2.5A, SOT-23-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.5A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.063ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:750mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jun-2015); Temperatura di Esercizio Min:-55°C

SI2307BDS-T1-E3 更多信息

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

型号	制造商	描述	库存	价格
SI2307BDS-T1-E3 DISTI # V72:2272_07432050	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R RoHS: Compliant	2185	1000:$0.2152 500:$0.2668 250:$0.3416 100:$0.3425 25:$0.4258 10:$0.4276 1:$0.4860
SI2307BDS-T1-E3 DISTI # SI2307BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	24407In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI2307BDS-T1-E3 DISTI # SI2307BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	24407In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI2307BDS-T1-E3 DISTI # SI2307BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	3000:$0.1875
SI2307BDS-T1-E3 DISTI # 29567482	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R RoHS: Compliant	2185	1000:$0.2152 500:$0.2668 250:$0.3416 100:$0.3425 28:$0.4258
SI2307BDS-T1-E3 DISTI # SI2307BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1949 6000:$0.1889 12000:$0.1809 18000:$0.1759 30000:$0.1719
SI2307BDS-T1-E3 DISTI # SI2307BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3179 6000:€0.2169 12000:€0.1869 18000:€0.1719 30000:€0.1599
SI2307BDS-T1-E3 DISTI # SI2307BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2307BDS-T1-E3 DISTI # 02J5180	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: 02J5180) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	1:$0.3200 6000:$0.3080 12000:$0.2980
SI2307BDS-T1-E3 DISTI # 64R4907	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 64R4907) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.9120 25:$0.7280 50:$0.6410 100:$0.5520 250:$0.5040 500:$0.4560 1000:$0.3650
SI2307BDS-T1-E3 DISTI # 64R4907	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:750mW , RoHS Compliant: Yes	3436	1:$0.9120 25:$0.7280 50:$0.6410 100:$0.5520 250:$0.5040 500:$0.4560 1000:$0.3650
SI2307BDS-T1-E3 DISTI # 02J5180	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 2.5A TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V, RoHS Compliant: Yes	6000	1:$0.3310 3000:$0.3200 6000:$0.3080 12000:$0.2980
SI2307BDS-T1-E3. DISTI # 30AC0138	Vishay Intertechnologies	FOR NEW DESIGNS USE SI2307CDS-T1-GE3 , ROHS COMPLIANT: NO	0	1:$0.3380 3000:$0.3200 6000:$0.3080 12000:$0.2980
SI2307BDS-T1-E3 DISTI # 70026066	Vishay Siliconix	MOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.063Ohm,ID -2.5A,TO-236 (SOT-23),PD 0.75W RoHS: Compliant	0	3000:$0.3400 6000:$0.3000 9000:$0.2700
SI2307BDS-T1-E3 DISTI # 781-SI2307BDS-E3	Vishay Intertechnologies	MOSFET 30V 3.2A 1.25W RoHS: Compliant	16579	1:$0.7600 10:$0.6070 100:$0.4600 500:$0.3800 1000:$0.3040 3000:$0.2760 6000:$0.2570 9000:$0.2480
SI2307BDS-T1-E3	Vishay Intertechnologies	Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	21000Reel	3000:$0.2700
SI2307BDS-T1-E3	Vishay Intertechnologies	Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	2945Cut Tape/Mini-Reel	1:$0.3750 250:$0.3200 500:$0.3150 750:$0.3100 1500:$0.3000
SI2307BDS-T1-E3	Vishay BLH		2730	12:$0.4500 46:$0.2925 172:$0.1688 594:$0.1440 1286:$0.1260
SI2307BDS-T1-E3	Vishay Intertechnologies		1625
SI2307BDS-T1-E3	Vishay Siliconix		165	12:$0.4500 46:$0.2925
SI2307BDS-T1-E3	Vishay Intertechnologies	2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	2184	1112:$0.1560 201:$0.1800 1:$0.6000
SI2307BDS-T1-E3	Vishay Semiconductors	2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	132	43:$0.3000 9:$0.4800 1:$0.6000
SI2307BDS-T1-E3 DISTI # XSFP00000063433	Vishay Siliconix	RoHS: Compliant	40343	3000:$0.7500 40343:$0.6818
SI2307BDS-T1-E3 DISTI # 1571143	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 2.5A TO-236, FUL RoHS: Compliant	6000	3000:$1.0500
SI2307BDS-T1-E3 DISTI # 2396090	Vishay Intertechnologies	MOSFET, P-CH, -30V, -2.5A, SOT-23-3 RoHS: Compliant	3781	1:$0.9350 10:$0.7900 100:$0.5920 500:$0.4340 1000:$0.4030
SI2307BDS-T1-E3 DISTI # C1S803600844070	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2185	250:$0.3407 100:$0.3416 25:$0.4240 10:$0.4258
SI2307BDS-T1-E3 DISTI # 2396090	Vishay Intertechnologies	MOSFET, P-CH, -30V, -2.5A, SOT-23-3 RoHS: Compliant	3714	5:£0.4560 25:£0.4240 100:£0.3030 250:£0.2630 500:£0.2220
SI2307BDS-T1-E3	Vishay Intertechnologies	MOSFET 30V 3.2A 1.25W RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: SI2307BDS-T1-E3 OMO.#: OMO-SI2307BDS-T1-E3	MOSFET 30V 3.2A 1.25W
	Mfr.#: SI2307BDS OMO.#: OMO-SI2307BDS-1190	2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
	Mfr.#: SI2307BDS-T1-GE3 OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY	MOSFET P-CH 30V 2.5A SOT23-3
	Mfr.#: SI2307BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI2307BDS-T1-E3 OMO.#: OMO-SI2307BDS-T1-E3-VISHAY	Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R

SI2307BDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes