FDME1034CZT

Mfr. #:: FDME1034CZT
制造商:: ON Semiconductor
描述:: MOSFET N/P-CH 20V 6-MICROFET
生命周期:: 制造商新产品。
数据表:: FDME1034CZT 数据表
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更多信息:: FDME1034CZT 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: FET - 阵列

系列: 动力战壕

打包: Digi-ReelR 替代包装

单位重量: 0.000889 oz

安装方式: 贴片/贴片

包装盒: 6-WDFN Exposed Pad

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-MicroFET (1.6x1.6)

配置: N 沟道 P 沟道

FET型: N 和 P 沟道

最大功率: 600mW

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 300pF @ 10V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 3.8A, 2.6A

Rds-On-Max-Id-Vgs: 66 mOhm @ 3.4A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 4.2nC @ 4.5V

钯功耗: 1.3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 1.7 ns 16 ns

上升时间: 2 ns 4.8 ns

VGS-栅极-源极-电压: +/- 8 V

Id 连续漏极电流: 3.4 A

Vds-漏-源-击穿电压: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 0.7 V - 0.6 V

Rds-On-Drain-Source-Resistance: 66 mOhms 142 mOhms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 15 ns 33 ns

典型开启延迟时间: 4.5 ns 4.7 ns

Qg-门电荷: 3 nC 5.5 nC

正向跨导最小值: 9 S 7 S

Tags: FDME103, FDME1, FDME, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDME1034CZT 更多信息

FDME10xx / FDFME2P PowerTrench® MOSFETs: ON Semiconductor FDME10xx and FDFME2P PowerTrench® MOSFETs are designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. The FDME1023PZT features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The FDME1024NZT is a dual N-Channel device with low on-state resistance for minimum conduction losses. The FDME1034CZT is a complementary PowerTrench device with an independent N-Channel and P-Channel MOSFET with low on-state resistance. The FDME1034CZT is minimized to allow high frequency switching directly from the controlling device. The FDFME2P PowerTrench device features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. Learn More

Market price

型号	制造商	描述	库存	价格
FDME1034CZT DISTI # V72:2272_06337946	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R	2981	1000:$0.2698 500:$0.3352 100:$0.3353 25:$0.5118 10:$0.5121 1:$0.6075
FDME1034CZT DISTI # V36:1790_06337946	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R	0
FDME1034CZT DISTI # FDME1034CZTFSCT-ND	ON Semiconductor	MOSFET N/P-CH 20V 6-MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9571In Stock	1000:$0.3082 500:$0.3852 100:$0.5200 10:$0.6740 1:$0.7700
FDME1034CZT DISTI # FDME1034CZTFSDKR-ND	ON Semiconductor	MOSFET N/P-CH 20V 6-MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9571In Stock	1000:$0.3082 500:$0.3852 100:$0.5200 10:$0.6740 1:$0.7700
FDME1034CZT DISTI # FDME1034CZTFSTR-ND	ON Semiconductor	MOSFET N/P-CH 20V 6-MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	5000:$0.2525
FDME1034CZT DISTI # 26620468	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R	35000	5000:$0.2157
FDME1034CZT DISTI # 14981334	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R	5000	5000:$0.2254
FDME1034CZT DISTI # 25979808	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R	2981	1000:$0.2900 500:$0.3603 100:$0.3604 27:$0.5502
FDME1034CZT DISTI # FDME1034CZT	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R (Alt: FDME1034CZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.3279 10000:€0.2679 20000:€0.2459 30000:€0.2269 50000:€0.2109
FDME1034CZT DISTI # FDME1034CZT	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R (Alt: FDME1034CZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0	5000:$0.3400 10000:$0.3269 15000:$0.3148 25000:$0.3036 50000:$0.2931 125000:$0.2833 250000:$0.2787
FDME1034CZT DISTI # FDME1034CZT	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R - Bulk (Alt: FDME1034CZT) RoHS: Not Compliant Min Qty: 1316 Container: Bulk	Americas - 0	1316:$0.2089 1318:$0.2069 2634:$0.2049 6580:$0.2019 13160:$0.1969
FDME1034CZT DISTI # FDME1034CZT	ON Semiconductor	Trans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDME1034CZT) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2219 10000:$0.2199 20000:$0.2169 30000:$0.2149 50000:$0.2089
FDME1034CZT DISTI # 92R5541	ON Semiconductor	MOSFET Transistor, N and P Channel, 3.8 A, 20 V, 0.055 ohm, 4.5 V, 700 mV	0	50000:$0.2230 25000:$0.2350 10000:$0.2600 5000:$0.2940 1:$0.2960
FDME1034CZT DISTI # 512-FDME1034CZT	ON Semiconductor	MOSFET 20V Complementary PowerTrench RoHS: Compliant	7068	1:$0.6300 10:$0.5270 100:$0.3400 1000:$0.2720 5000:$0.2300 10000:$0.2220 25000:$0.2130
FDME1034CZT	ON Semiconductor	Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4473	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDME1034CZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	191954	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDME1034CZT DISTI # 7599147P	ON Semiconductor	MOSFET N/P-CH 20V 3.4A/2.3A MICROFET6, RL	260	2500:£0.1880 500:£0.1920 125:£0.1960

图片	型号	描述
	Mfr.#: FDME1034CZT OMO.#: OMO-FDME1034CZT	MOSFET 20V Complementary PowerTrench
	Mfr.#: FDME1024NZT OMO.#: OMO-FDME1024NZT	MOSFET 20V Dual N-Channel PowerTrench
	Mfr.#: FDME1023PZT OMO.#: OMO-FDME1023PZT-ON-SEMICONDUCTOR	MOSFET 2P-CH 20V 2.6A 6-MICROFET
	Mfr.#: FDME1023PZTONSEMI OMO.#: OMO-FDME1023PZTONSEMI-1190	全新原装
	Mfr.#: FDME1024NZT_T OMO.#: OMO-FDME1024NZT-T-1190	全新原装
	Mfr.#: FDME1034CZ OMO.#: OMO-FDME1034CZ-1190	全新原装
	Mfr.#: FDME1034CZT OMO.#: OMO-FDME1034CZT-ON-SEMICONDUCTOR	MOSFET N/P-CH 20V 6-MICROFET
	Mfr.#: FDME1034CZT , 1N5239B OMO.#: OMO-FDME1034CZT-1N5239B-1190	全新原装
	Mfr.#: FDME1042NZT OMO.#: OMO-FDME1042NZT-1190	全新原装
	Mfr.#: FDME104T-R36MSOR765 OMO.#: OMO-FDME104T-R36MSOR765-1190	全新原装

FDME1034CZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes