CSD75301W1015

Mfr. #:: CSD75301W1015
描述:: IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs
生命周期:: 制造商新产品。
数据表:: CSD75301W1015 数据表
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更多信息:: CSD75301W1015 更多信息 CSD75301W1015 Product Details

产品属性
属性值

制造商: TI

产品分类: FET - 阵列

系列: 场效应管

打包: 数码卷轴

包装盒: 6-UFBGA, DSBGA

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

供应商-设备-包: 6-DSBGA (1x1.5)

FET型: 2 P-Channel (Dual)

最大功率: 800mW

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 195pF @ 10V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 1.2A

Rds-On-Max-Id-Vgs: 100 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 2.1nC @ 4.5V

Tags: CSD75, CSD7, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD75301W1015 描述

***as Instruments: P-Channel Dual Common Source NexFET Power MOSFET 6-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R

***et: Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2P-CH 20V 1.2A 6DSBGA

***th Star Micro: the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

***ark: P CH DUAL COMMON SOURCE POWER MOSFET, -20V, -1.2A, DSBGA-6; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; Module Configuration:Dual P Channel; On Resistance Rds(on):0.08ohm; Power Dissipation Pd:800mW

***nell: MOSFET, 2 CANALI P, 20V, 1.2A, 6DSBGA; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-1.2A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:800mW; Modello Case Transistor:DSBGA; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Configurazione Modulo:Doppio a Canale P; Corrente Continua di Drain Id, Canale P:-1.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza di Attivazione Rds(on), Canale P:0.15ohm; Temperatura di Esercizio Min:-55°C; Tensione Drain Source Vds, Canale P:-20V

Market price

型号	描述	库存	价格
CSD75301W1015 DISTI # 296-24261-2-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD75301W1015 DISTI # 296-24261-1-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD75301W1015 DISTI # 296-24261-6-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD75301W1015 DISTI # CSD75301W1015	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD75301W1015) RoHS: Compliant Min Qty: 962	Americas - 0	962:$0.3769 964:$0.3589 1926:$0.3469 4810:$0.3349 9620:$0.3259
CSD75301W1015 DISTI # 595-CSD75301W1015	MOSFET P-Ch-Dual Common Source Pwr MOSFETs RoHS: Compliant	0
CSD75301W1015	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1760	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
CSD75301W1015 DISTI # 1892455	MOSFET, PP CH, 20V, 1.2A, 6DSBGA RoHS: Compliant	988	5:£0.6490 25:£0.5860 100:£0.4450 250:£0.4190 500:£0.3940

CSD75301W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes