S25FL512SDSMFBG11

S25FL512SDSMFBG11
Mfr. #:
S25FL512SDSMFBG11
制造商:
Cypress Semiconductor
描述:
Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
生命周期:
制造商新产品。
数据表:
S25FL512SDSMFBG11 数据表
交货:
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ECAD Model:
更多信息:
S25FL512SDSMFBG11 更多信息 S25FL512SDSMFBG11 Product Details
产品属性
属性值
制造商
赛普拉斯半导体公司
产品分类
记忆
系列
FL-S
打包
* 替代包装
安装方式
贴片/贴片
包装盒
SO-16
工作温度
-40°C ~ 105°C (TA)
界面
SPI 串行
电压供应
2.7 V ~ 3.6 V
供应商-设备-包
16-SO
内存大小
512M (64M x 8)
内存型
闪存 - NOR
速度
80MHz
建筑学
MirrorBit Eclipse
格式化内存
闪光
标准
通用闪存接口 (CFI)
接口类型
SPI
组织
64 M x 8
电源电流最大值
100 mA
数据总线宽度
8 bit
最大电源电压
3.6 V
电源电压最小值
2.7 V
最大时钟频率
80 MHz
时序型
异步
Tags
S25FL512SDSMFBG, S25FL512SDSMFB, S25FL512SDSM, S25FL512SDS, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERI
***i-Key
IC FLASH 512M SPI 80MHZ 16SOIC
***ark
TUBE PKGED / 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
型号 制造商 描述 库存 价格
S25FL512SDSMFBG11
DISTI # S25FL512SDSMFBG11-ND
Cypress SemiconductorIC FLASH 512M SPI 80MHZ 16SOIC
RoHS: Compliant
Min Qty: 94
Container: Tube
Temporarily Out of Stock
  • 94:$8.5576
S25FL512SDSMFBG11
DISTI # 727-S25FL512SDSMFBG1
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1:$11.0000
  • 10:$10.0000
  • 25:$9.2500
  • 50:$8.5000
  • 250:$7.7500
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S25FL512SDSBHI213

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Mfr.#: S25FL512SDPBHV213

OMO.#: OMO-S25FL512SDPBHV213

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S25FL512SAG-AEC13

Mfr.#: S25FL512SAG-AEC13

OMO.#: OMO-S25FL512SAG-AEC13

NOR Flash
S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGBHM213

Mfr.#: S25FL512SAGBHM213

OMO.#: OMO-S25FL512SAGBHM213-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGMFVG10

Mfr.#: S25FL512SAGMFVG10

OMO.#: OMO-S25FL512SAGMFVG10-CYPRESS-SEMICONDUCTOR

Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGMFVG13

Mfr.#: S25FL512SAGMFVG13

OMO.#: OMO-S25FL512SAGMFVG13-CYPRESS-SEMICONDUCTOR

Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGBHIY10

Mfr.#: S25FL512SAGBHIY10

OMO.#: OMO-S25FL512SAGBHIY10-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SAGMFI013

Mfr.#: S25FL512SAGMFI013

OMO.#: OMO-S25FL512SAGMFI013-CYPRESS-SEMICONDUCTOR

Flash 512Mb 3V 133MHz Serial NOR Flash
可用性
库存:
Available
订购:
3000
输入数量:
S25FL512SDSMFBG11的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$11.62
US$11.62
10
US$11.04
US$110.44
100
US$10.46
US$1 046.25
500
US$9.88
US$4 940.65
1000
US$9.30
US$9 300.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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