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IRLHM620TR2PBF

IRLHM620TR2PBF
Mfr. #:
IRLHM620TR2PBF
制造商:
Infineon / IR
描述:
MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
生命周期:
制造商新产品。
数据表:
IRLHM620TR2PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PQFN-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
40 A
Rds On - 漏源电阻：
2.5 mOhms
Vgs - 栅源电压：
12 V
Qg - 门电荷：
52 nC
Pd - 功耗：
37 W
配置：
单身的
打包：
卷轴
高度：
0.9 mm
长度：
3.3 mm
晶体管类型：
1 N-Channel
宽度：
3.3 mm
品牌：
英飞凌/红外
产品类别：
MOSFET
出厂包装数量：
400
子类别：
MOSFET
第 # 部分别名：
SP001558170
Tags
IRLHM620T, IRLHM62, IRLHM, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
***(Formerly Allied Electronics)
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
***et
Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R
***nell
MOSFET,W DIODE,N CH,20V,26A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V
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***roFlash
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*** Source Electronics
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***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
***et Europe
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***ment14 APAC
MOSFET,W DIODE,N CH,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V
***ernational Rectifier
20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package
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***ical
Trans MOSFET N-CH 20V 4.5A 6-Pin PQFN EP T/R
***nell
MOSFET, DUAL N CH, 20V, 3.4A, PQFN-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 6.6W; Transistor Case Style: PQFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
***ment14 APAC
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
型号 制造商 描述 库存 价格
IRLHM620TR2PBF
DISTI # IRLHM620TR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 20V 26A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRLHM620TR2PBF
    DISTI # IRLHM620TR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 20V 26A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRLHM620TR2PBF
      DISTI # 70019943      		Infineon Technologies AGMOSFET,20V,40A,2.5 MOHM,2.5V DRIVE CAPABLE,PQFN3.3X3.3
      RoHS: Compliant      		0
      • 800:$1.2700
      • 1600:$1.2450
      • 4000:$1.2070
      • 8000:$1.1560
      • 20000:$1.0800
      IRLHM620TR2PBF
      DISTI # 942-IRLHM620TR2PBF      		Infineon Technologies AGMOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
      RoHS: Compliant      		0
        IRLHM620TR2PBF
        DISTI # 1865592RL        		Infineon Technologies AGMOSFET,W DIODE,N CH,20V,26A,PQFN33
        RoHS: Compliant        		0
        • 1:$1.9600
        • 10:$1.6200
        • 100:$1.3100
        • 400:$1.1700
        • 800:$1.0400
        • 2400:$0.9640
        • 10000:$0.9310
        IRLHM620TR2PBF
        DISTI # 1865592        		Infineon Technologies AGMOSFET,W DIODE,N CH,20V,26A,PQFN33
        RoHS: Compliant        		0
        • 1:$1.9600
        • 10:$1.6200
        • 100:$1.3100
        • 400:$1.1700
        • 800:$1.0400
        • 2400:$0.9640
        • 10000:$0.9310
        图片 型号 描述
        IRLHM620TRPBF

        Mfr.#: IRLHM620TRPBF

        OMO.#: OMO-IRLHM620TRPBF

        		 MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC
        IRLHM620TR2PBF

        Mfr.#: IRLHM620TR2PBF

        OMO.#: OMO-IRLHM620TR2PBF

        		 MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
        IRLHM620PBF

        Mfr.#: IRLHM620PBF

        OMO.#: OMO-IRLHM620PBF-1190

        		 全新原装
        IRLHM620TRPBF

        Mfr.#: IRLHM620TRPBF

        OMO.#: OMO-IRLHM620TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 20V 26A PQFN
        IRLHM620TRPBF_PSI , 2SK1

        Mfr.#: IRLHM620TRPBF_PSI , 2SK1

        OMO.#: OMO-IRLHM620TRPBF-PSI-2SK1-1190

        		 全新原装
        IRLHM620TRPBF-CUT TAPE

        Mfr.#: IRLHM620TRPBF-CUT TAPE

        OMO.#: OMO-IRLHM620TRPBF-CUT-TAPE-1190

        		 全新原装
        IRLHM620TR2PBF

        Mfr.#: IRLHM620TR2PBF

        OMO.#: OMO-IRLHM620TR2PBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
        可用性
        库存:
        Available
        订购:
        4500
        输入数量:
        IRLHM620TR2PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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