2N5686G

2N5686G
Mfr. #:
2N5686G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 50A 80V 300W NPN
生命周期:
制造商新产品。
数据表:
2N5686G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5686G Datasheet2N5686G Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-204-2
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
80 V
集电极-基极电压 VCBO:
80 V
发射极基极电压 VEBO:
5 V
集电极-发射极饱和电压:
1 V
最大直流集电极电流:
50 A
增益带宽积 fT:
2 MHz
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
系列:
2N5686
高度:
8.51 mm
长度:
38.86 mm
打包:
托盘
宽度:
26.67 mm
品牌:
安森美半导体
连续集电极电流:
50 A
DC 集电极/基极增益 hfe 最小值:
15
Pd - 功耗:
300 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
100
子类别:
晶体管
单位重量:
0.488015 oz
Tags
2N568, 2N56, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5
***emi
50 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
***r Electronics
Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
***ure Electronics
2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204
***el Electronic
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
***nell
TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor
***roFlash
Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5
***emi
60 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***enic
80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS
***ark
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes
***nell
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V
***ical
Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***emi
High Power NPN Bipolar Power Transistor
***ark
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)
***emi
25 A, 80 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***r Electronics
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
***ure Electronics
2N Series 80 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA
***ment14 APAC
Transistor, NPN, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC
***nell
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Av Current Ic: 25A; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 25A; Current Ic Continuous a Max: 25A; Current Ic hFE: 10A; Device Marking: 2N5886G; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Power Dissipation Ptot Max: 200W; Voltage Vcbo: 80V
型号 制造商 描述 库存 价格
2N5686G
DISTI # V99:2348_07290247
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
100
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # V36:1790_07290247
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
85
  • 1000:$7.2220
  • 500:$8.0230
  • 200:$9.1660
  • 100:$9.5820
2N5686G
DISTI # 2N5686GOS-ND
ON SemiconductorTRANS NPN 80V 50A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray
304In Stock
  • 500:$9.5369
  • 100:$10.7208
  • 10:$12.6940
  • 1:$13.8100
2N5686G
DISTI # 31062962
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
100
  • 1:$9.5820
2N5686G
DISTI # 30223364
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray
RoHS: Compliant
85
  • 85:$9.5820
2N5686G
DISTI # 2N5686G
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 100
Container: Tray
Americas - 85
  • 100:$8.0900
  • 200:$8.0900
  • 400:$7.9900
  • 600:$7.8900
  • 1000:$7.6900
2N5686G
DISTI # 2N5686G
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray (Alt: 2N5686G)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€10.7755
  • 10:€9.9130
  • 100:€8.3720
2N5686G
DISTI # 26K5299
ON SemiconductorTrans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5299)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$13.1500
  • 10:$12.1000
  • 25:$11.5900
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 26K5299
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 80V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2MHz,Power Dissipation Pd:300mW,DC Collector Current:50A,DC Current Gain hFE:2hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes172
  • 1:$11.1800
  • 10:$10.2900
  • 25:$9.8600
  • 50:$9.2800
  • 100:$8.6900
  • 250:$8.2600
  • 500:$7.7300
2N5686G.
DISTI # 30AC3786
ON SemiconductorBIP T03 NPN 50A 80V , ROHS COMPLIANT: YES85
  • 1:$13.4100
  • 10:$12.3400
  • 25:$11.8200
  • 50:$10.9100
  • 100:$10.2200
  • 250:$9.7100
  • 500:$9.0900
2N5686G
DISTI # 70099763
ON SemiconductorTransistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5
RoHS: Compliant
0
  • 1:$13.0900
  • 100:$12.4400
  • 250:$11.8100
2N5686GON Semiconductor 
RoHS: Not Compliant
3067
  • 1000:$10.2400
  • 500:$10.7700
  • 100:$11.2200
  • 25:$11.7000
  • 1:$12.6000
2N5686G
DISTI # 863-2N5686G
ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Compliant
187
  • 1:$13.1500
  • 10:$12.1000
  • 20:$11.5900
  • 100:$10.2200
  • 200:$9.7100
  • 500:$9.0900
2N5686
DISTI # 863-2N5686
ON SemiconductorBipolar Transistors - BJT 50A 80V 300W NPN
RoHS: Not compliant
0
    2N5686G
    DISTI # 8624893
    ON SemiconductorBJT NPN 50A 80V TO-204-2, EA228
    • 1:£9.7000
    2N5686G
    DISTI # 2630288
    ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant
    253
    • 1:$20.8200
    • 10:$19.1500
    • 20:$18.3500
    • 100:$16.1700
    • 200:$15.3700
    • 500:$14.3900
    • 1000:$13.2000
    2N5686G
    DISTI # 2630288
    ON SemiconductorTRANS, BIPOL, NPN, 80V, TO-204AA
    RoHS: Compliant
    262
    • 1:£10.5600
    • 5:£10.0500
    • 10:£8.8600
    • 50:£8.1400
    • 100:£7.4100
    图片 型号 描述
    2N5684G

    Mfr.#: 2N5684G

    OMO.#: OMO-2N5684G

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    可用性
    库存:
    218
    订购:
    2201
    输入数量:
    2N5686G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$14.99
    US$14.99
    10
    US$13.79
    US$137.90
    20
    US$13.21
    US$264.20
    100
    US$11.64
    US$1 164.00
    200
    US$11.07
    US$2 214.00
    500
    US$10.36
    US$5 180.00
    1000
    US$9.50
    US$9 500.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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