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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SIHFR1N60A-GE3 DISTI # V36:1790_09218418 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK RoHS: Compliant | 0 |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 1.4A TO252AA Min Qty: 1 Container: Tube | 3000In Stock |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3 | Vishay Intertechnologies | MOS Power Transistors HV (>= 200V) (Alt: SIHFR1N60A-GE3) Min Qty: 1 | Europe - 4425 |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3 | Vishay Intertechnologies | MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHFR1N60A-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIHFR1N60A-GE3 DISTI # 78-SIHFR1N60A-GE3 | Vishay Intertechnologies | MOSFET 600V Vds TO-252 DPAK RoHS: Compliant | 907 |
|
| SIHFR1N60A-GE3 DISTI # SIHFR1N60A-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET,unipolar,600V,0.98A,36W,DPAK | 147 |
|
| SIHFR1N60A-GE3 DISTI # XSKDRABV0026536 | Vishay Intertechnologies | RoHS: Compliant | 3525 in Stock0 on Order |
|
| SIHFR1N60AGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SIHFR1N60ATR-GE3 OMO.#: OMO-SIHFR1N60ATR-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHFR1N60A-GE3 OMO.#: OMO-SIHFR1N60A-GE3 |
MOSFET 600V Vds TO-252 DPAK |
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Mfr.#: SIHFR110 OMO.#: OMO-SIHFR110-1190 |
全新原装 |
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Mfr.#: SIHFR110TL OMO.#: OMO-SIHFR110TL-1190 |
全新原装 |
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Mfr.#: SIHFR110TL-E3 OMO.#: OMO-SIHFR110TL-E3-1190 |
全新原装 |
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Mfr.#: SIHFR1N60A OMO.#: OMO-SIHFR1N60A-1190 |
全新原装 |
|
Mfr.#: SIHFR1N60A-GE3 OMO.#: OMO-SIHFR1N60A-GE3-VISHAY |
MOSFET N-CH 600V 1.4A TO252AA |
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Mfr.#: SIHFR1N60AGE3 OMO.#: OMO-SIHFR1N60AGE3-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
|
Mfr.#: SIHFR1N60ATR-GE3 OMO.#: OMO-SIHFR1N60ATR-GE3-VISHAY |
MOSFET N-CH 600V 1.4A TO252AA |