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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BF1009SE6327HTSA1 DISTI # BF1009SE6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 12V 25MA SOT-143 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BF1009SRE6327HTSA1 DISTI # BF1009SRE6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 12V 25MA SOT-143R RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BF 1009S E6327 DISTI # BF1009SE6327 | Infineon Technologies AG | Trans MOSFET N-CH 12V 0.025A 4-Pin(3+Tab) SOT-143 - Bulk (Alt: BF1009SE6327) RoHS: Not Compliant Min Qty: 3125 Container: Bulk | Americas - 0 |
|
| BF 1009SR E6327 DISTI # BF 1009SR E6327 | Infineon Technologies AG | Trans MOSFET N-CH 12V 0.025A 4-Pin(3+Tab) SOT-143 T/R - Bulk (Alt: BF 1009SR E6327) RoHS: Compliant Min Qty: 3125 Container: Bulk | Americas - 0 |
|
| BF1009SRE6327HTSA1 DISTI # BF1009SRE6327HTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 12V 0.025A 4-Pin SOT-143R T/R - Bulk (Alt: BF1009SRE6327HTSA1) Min Qty: 2500 Container: Bulk | Americas - 0 |
|
| BF 1009S E6327 DISTI # 726-BF1009SE6327 | Infineon Technologies AG | RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode RoHS: Compliant | 0 | |
| BF 1009SR E6327 DISTI # 726-BF1009SRE6327 | Infineon Technologies AG | RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V RoHS: Compliant | 0 | |
| BF1009SRE6327HTSA1 | Infineon Technologies AG | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 9000 |
|
| BF 1009SR E6327 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 5230 |
|
| BF1009SE6327 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 2997 |
|
| BF1009SR-E7730 | Siemens | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET (Also Known As: BF1009SR) | 111000 |
|
| BF1009SR-E7730 | Siemens | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET | 111000 |
|
| BF1009SRE6327 | Siemens | 2848 |
| |
| BF1009SRE6327 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 16925 | |
| BF1009SE6327 | Siemens | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 3000 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: BF1009S E6327 OMO.#: OMO-BF1009S-E6327-1190 |
全新原装 |
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Mfr.#: BF1202WR / LE OMO.#: OMO-BF1202WR-LE-PHILIPS |
全新原装 |
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Mfr.#: BF1204 OMO.#: OMO-BF1204-NXP |
全新原装 |
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Mfr.#: BF1211 |
全新原装 |
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Mfr.#: BF1217WR |
全新原装 |
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Mfr.#: BF1282D OMO.#: OMO-BF1282D-1190 |
全新原装 |
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Mfr.#: BF191 OMO.#: OMO-BF191-1190 |
全新原装 |
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Mfr.#: BF1801D024 OMO.#: OMO-BF1801D024-1190 |
Contactor:3-pole, NO x3, Auxiliary contacts: NC, 24VDC, 18A, DIN |
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Mfr.#: BF120-10-A-1-N-C OMO.#: OMO-BF120-10-A-1-N-C-1190 |
全新原装 |
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Mfr.#: BF1118W,115 |
RF Switch ICs SILICON RF SWITCHES |