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BSC026NE2LS5

BSC026NE2LS5
Mfr. #:
BSC026NE2LS5
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5)
生命周期:
制造商新产品。
数据表:
BSC026NE2LS5 数据表
交货:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
部分别名
BSC026NE2LS5 SP001212432
安装方式
贴片/贴片
包装盒
TDSON-8
技术
硅
通道数
1 Channel
配置
单身的
钯功耗
29 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
2 ns
上升时间
3 ns
VGS-栅极-源极-电压
+/- 16 V
Id 连续漏极电流
82 A
Vds-漏-源-击穿电压
25 V
VGS-th-Gate-Source-Threshold-Voltage
1.2 V
Rds-On-Drain-Source-Resistance
4 mOhms
晶体管极性
N通道
典型关断延迟时间
13 ns
典型开启延迟时间
3 ns
Qg-门电荷
12 nC
正向跨导最小值
55 S
通道模式
增强
Tags
BSC026NE, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
BSC026NE2LS5ATMA1
DISTI # V72:2272_06384601		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant		2408
  • 1000:$0.4817
  • 500:$0.5927
  • 250:$0.6620
  • 100:$0.6691
  • 25:$0.8334
  • 10:$0.8432
  • 1:$0.9629
BSC026NE2LS5ATMA1
DISTI # BSC026NE2LS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8086In Stock
  • 1000:$0.5999
  • 500:$0.7599
  • 100:$0.9799
  • 10:$1.2400
  • 1:$1.4000
BSC026NE2LS5ATMA1
DISTI # BSC026NE2LS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8086In Stock
  • 1000:$0.5999
  • 500:$0.7599
  • 100:$0.9799
  • 10:$1.2400
  • 1:$1.4000
BSC026NE2LS5ATMA1
DISTI # BSC026NE2LS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.5164
BSC026NE2LS5ATMA1
DISTI # 29726537		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.6787
BSC026NE2LS5ATMA1
DISTI # 30171923		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant		2408
  • 1000:$0.4817
  • 500:$0.5927
  • 250:$0.6620
  • 100:$0.6691
  • 25:$0.8334
  • 13:$0.8432
BSC026NE2LS5
DISTI # BSC026NE2LS5		Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R - Tape and Reel (Alt: BSC026NE2LS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.5079
    • 10000:$0.4899
    • 20000:$0.4719
    • 30000:$0.4559
    • 50000:$0.4479
    BSC026NE2LS5ATMA1
    DISTI # 34AC1375    		Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:82A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes0
    • 1:$1.1600
    • 10:$0.9890
    • 25:$0.9120
    • 50:$0.8360
    • 100:$0.7590
    • 250:$0.7150
    • 500:$0.6710
    • 1000:$0.5300
    BSC026NE2LS5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		64375
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    BSC026NE2LS5ATMA1Infineon Technologies AGBSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS Power-MOSFET - PG-TDSON-8
    RoHS: Compliant    		5000Reel
    • 5000:$0.4850
    BSC026NE2LS5ATMA1Infineon Technologies AGBSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS Power-MOSFET - PG-TDSON-8
    RoHS: Compliant    		4250Cut Tape/Mini-Reel
    • 1:$0.7100
    • 100:$0.6100
    • 250:$0.5950
    • 500:$0.5800
    • 1500:$0.5400
    BSC026NE2LS5ATMA1
    DISTI # 726-BSC026NE2LS5ATMA    		Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant    		6860
    • 1:$1.1600
    • 10:$0.9890
    • 100:$0.7590
    • 500:$0.6710
    • 1000:$0.5300
    • 5000:$0.4700
    BSC026NE2LS5ATMA1
    DISTI # 1336581    		Infineon Technologies AGMOSFET OPTIMOS5 25V 82A 2.6M SUPERSO8, RL3845
    • 5000:£0.3830
    • 15000:£0.3680
    BSC026NE2LS5ATMA1
    DISTI # 2781052    		Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON
    RoHS: Compliant    		0
    • 5:$1.6700
    • 25:$1.4500
    • 100:$1.1800
    BSC026NE2LS5ATMA1
    DISTI # C1S322000625394    		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
    RoHS: Compliant    		2408
    • 250:$0.6843
    • 100:$0.6860
    • 25:$0.8468
    • 10:$0.8500
    BSC026NE2LS5ATMA1
    DISTI # 2781052    		Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON
    RoHS: Compliant    		0
    • 5:£0.8500
    • 25:£0.6940
    • 100:£0.5850
    • 250:£0.5340
    • 500:£0.5170
    图片 型号 描述
    BSC026N04LS

    Mfr.#: BSC026N04LS

    OMO.#: OMO-BSC026N04LS

    		 MOSFET DIFFERENTIATED MOSFETS
    BSC026N02KS G

    Mfr.#: BSC026N02KS G

    OMO.#: OMO-BSC026N02KS-G

    		 MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
    BSC026N04LSATMA1

    Mfr.#: BSC026N04LSATMA1

    OMO.#: OMO-BSC026N04LSATMA1

    		 MOSFET MV POWER MOS
    BSC026N08NS5ATMA1

    Mfr.#: BSC026N08NS5ATMA1

    OMO.#: OMO-BSC026N08NS5ATMA1

    		 MOSFET N-Ch 80V 100A TDSON-8
    BSC026N02KSGAUMA1

    Mfr.#: BSC026N02KSGAUMA1

    OMO.#: OMO-BSC026N02KSGAUMA1

    		 MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
    BSC026NE2LS5ATMA1

    Mfr.#: BSC026NE2LS5ATMA1

    OMO.#: OMO-BSC026NE2LS5ATMA1

    		 MOSFET LV POWER MOS
    BSC026N02KSG

    Mfr.#: BSC026N02KSG

    OMO.#: OMO-BSC026N02KSG-1190

    		 Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC026N02KSGAUMA1

    Mfr.#: BSC026N02KSGAUMA1

    OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 20V 100A TDSON-8
    BSC026N04LS

    Mfr.#: BSC026N04LS

    OMO.#: OMO-BSC026N04LS-1190

    		 Trans MOSFET N-CH 40V 23A
    BSC026N04LSATMA1

    Mfr.#: BSC026N04LSATMA1

    OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 40V 23A 8TDSON
    可用性
    库存:
    Available
    订购:
    3500
    输入数量:
    BSC026NE2LS5的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
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