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SI7112DN-T1-GE3

SI7112DN-T1-GE3
Mfr. #:
SI7112DN-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI7112DN-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PowerPAK-1212-8
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
1.04 mm
长度：
3.3 mm
系列：
SI7
宽度：
3.3 mm
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SI7112DN-GE3
Tags
SI7112DN-T, SI7112D, SI7112, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R
***ark
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8
***ment14 APAC
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-
***i-Key
MOSFET N-CH 30V 11.3A 1212-8
***nell
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
型号 制造商 描述 库存 价格
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7170
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7913
  • 500:$1.0023
  • 100:$1.2924
  • 10:$1.6350
  • 1:$1.8500
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7913
  • 500:$1.0023
  • 100:$1.2924
  • 10:$1.6350
  • 1:$1.8500
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7112DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9749
  • 6000:$0.9459
  • 12000:$0.9069
  • 18000:$0.8819
  • 30000:$0.8579
SI7112DN-T1-GE3
DISTI # 69W7220		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV, RoHS Compliant: Yes0
  • 1:$2.0900
  • 25:$1.7300
  • 50:$1.5400
  • 100:$1.3400
  • 250:$1.2600
  • 500:$1.1800
  • 1000:$0.9720
SI7112DN-T1-GE3
DISTI # 33P5375		Vishay IntertechnologiesMOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.9920
  • 3000:$0.9850
  • 6000:$0.9380
  • 12000:$0.8310
SI7112DN-T1-GE3
DISTI # 781-SI7112DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
RoHS: Compliant		0
  • 1:$2.0900
  • 10:$1.7300
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9720
  • 3000:$0.9050
  • 6000:$0.8720
  • 9000:$0.8710
SI7112DN-T1-GE3
DISTI # 2459429		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8
RoHS: Compliant		0
  • 3000:$3.8500
SI7112DN-T1-GE3
DISTI # 2459429		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK
RoHS: Compliant		0
  • 3000:£0.8540
图片 型号 描述
SI7112DN-T1-E3

Mfr.#: SI7112DN-T1-E3

OMO.#: OMO-SI7112DN-T1-E3

 MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
SI7112DN-T1-GE3

Mfr.#: SI7112DN-T1-GE3

OMO.#: OMO-SI7112DN-T1-GE3

 MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
SI7112DN-T1-GE3

Mfr.#: SI7112DN-T1-GE3

OMO.#: OMO-SI7112DN-T1-GE3-VISHAY

 MOSFET N-CH 30V 11.3A 1212-8
SI7112DN-T1-E3-CUT TAPE

Mfr.#: SI7112DN-T1-E3-CUT TAPE

OMO.#: OMO-SI7112DN-T1-E3-CUT-TAPE-1190

 全新原装
SI7112DN

Mfr.#: SI7112DN

OMO.#: OMO-SI7112DN-1190

 全新原装
SI7112DN-T1

Mfr.#: SI7112DN-T1

OMO.#: OMO-SI7112DN-T1-1190

 全新原装
SI7112DN-T1-E3CT

Mfr.#: SI7112DN-T1-E3CT

OMO.#: OMO-SI7112DN-T1-E3CT-1190

 全新原装
SI7112DN-T1-GE3CT

Mfr.#: SI7112DN-T1-GE3CT

OMO.#: OMO-SI7112DN-T1-GE3CT-1190

 全新原装
SI7112DN-T1-E3

Mfr.#: SI7112DN-T1-E3

OMO.#: OMO-SI7112DN-T1-E3-VISHAY

 MOSFET N-CH 30V 11.3A 1212-8
可用性
库存:
Available
订购:
1989
输入数量:
SI7112DN-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.08
US$2.08
10
US$1.72
US$17.20
100
US$1.34
US$134.00
500
US$1.17
US$585.00
1000
US$0.97
US$971.00
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