MR0A16AYS35R

Mfr. #:: MR0A16AYS35R
制造商:: Everspin Technologies
描述:: IC RAM 1M PARALLEL 44TSOP
生命周期:: 制造商新产品。
数据表:: MR0A16AYS35R 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR0A16AYS35R 更多信息

产品属性
属性值

制造商: 飞思卡尔半导体 - NXP

产品分类: 记忆

系列: MR0A16A

打包: 卷带 (TR)

安装方式: 贴片/贴片

包装盒: TSOP-44

工作温度: 0°C ~ 70°C (TA)

界面: 平行线

电压供应: 3 V ~ 3.6 V

供应商-设备-包: 44-TSOP II

内存大小: 1M (64K x 16)

内存型: MRAM（磁阻RAM）

速度: 35ns

访问时间: 35 ns

格式化内存: 内存

最高工作温度: + 70 C

最低工作温度: 0 C

工作电源电流: 105 mA

接口类型: 平行线

组织: 64 k x 16

数据总线宽度: 16 bit

最大电源电压: 3.6 V

电源电压最小值: 3 V

Tags: MR0A1, MR0A, MR0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR0A16AYS35R 评级和评论

V***o

all ok

2019-07-11

V***D

The second time it came, for the first money returned

2019-09-09

MR0A16AYS35R 描述

***et Europe: NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R

***i-Key: IC MRAM 1MBIT 35NS 44TSOP

MR0A16AYS35R 更多信息

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM: Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Market price

型号	制造商	描述	库存	价格
MR0A16AYS35R DISTI # MR0A16AYS35R-ND	NXP Semiconductors	IC RAM 1M PARALLEL 44TSOP RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
MR0A16AYS35R DISTI # MR0A16AYS35REV-ND	Everspin Technologies	IC RAM 1M PARALLEL 44TSOP RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$8.8977
MR0A16AYS35 DISTI # 936-MR0A16AYS35	Everspin Technologies	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS: Compliant	85	1:$11.8400 10:$10.9700 25:$10.7200 50:$10.6600 100:$9.3900 250:$8.9200 500:$8.8300
MR0A16AYS35R DISTI # 936-MR0A16AYS35R	Everspin Technologies	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS: Compliant	0	1:$12.1100 10:$11.2200 25:$10.9700 50:$10.9100 100:$9.6000 250:$9.1300 500:$9.0300 1000:$8.9000 1500:$8.4900
MR0A16AYS35R DISTI # 841-MR0A16AYS35R	NXP Semiconductors	RAM Miscellaneous 1-MB STANDALONE MRAM RoHS: Compliant	0

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	Mfr.#: MR0A16AVYS35R OMO.#: OMO-MR0A16AVYS35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
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	Mfr.#: MR0A16ACYS35 OMO.#: OMO-MR0A16ACYS35-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AYS35R OMO.#: OMO-MR0A16AYS35R-EVERSPIN-TECHNOLOGIES	IC RAM 1M PARALLEL 44TSOP