MMRF5017HSR5

MMRF5017HSR5
Mfr. #:
MMRF5017HSR5
制造商:
NXP Semiconductors
描述:
RF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
生命周期:
制造商新产品。
数据表:
MMRF5017HSR5 数据表
交货:
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支付:
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HTML Datasheet:
MMRF5017HSR5 DatasheetMMRF5017HSR5 Datasheet (P4-P6)MMRF5017HSR5 Datasheet (P7-P9)MMRF5017HSR5 Datasheet (P10)
ECAD Model:
更多信息:
MMRF5017HSR5 更多信息 MMRF5017HSR5 Product Details
产品属性
属性值
制造商:
恩智浦
产品分类:
射频 MOSFET 晶体管
RoHS:
Y
晶体管极性:
N通道
技术:
氮化镓碳化硅
Id - 连续漏极电流:
200 mA
Vds - 漏源击穿电压:
125 V
输出功率:
125 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
安装方式:
贴片/贴片
包装/案例:
NI-400S-2
打包:
卷轴
工作频率:
30 MHz to 2200 MHz
系列:
MMRF5017HS
类型:
射频功率MOSFET
品牌:
恩智浦半导体
通道数:
1 Channel
Pd - 功耗:
154 W
产品类别:
射频 MOSFET 晶体管
出厂包装数量:
50
子类别:
MOSFET
Vgs - 栅源电压:
- 8 V
Vgs th - 栅源阈值电压:
- 2.3 V
第 # 部分别名:
935360891138
Tags
MMRF5017, MMRF50, MMRF5, MMRF, MMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Wideband Rf Power Gan Transistor, 30-2200 Mhz, 125 W Cw, 50 V Rohs Compliant: Yes
***W
RF Power Transistor, 0.03 to 2.2 GHz, 125 W CW, 50 V, SOT1828-1, GaN
***et
RF Power GaN Transistor 30MHz to 2200MHz 125W 2-Pin NI-400S-2S
***ow.cn
Trans RF MOSFET 125V 3-Pin CFMF T/R
MMRF5017HS 125W 50V GaN RF Power Transistor
NXP Semiconductors MMRF5017HS 125W 50V GaN RF Power Transistor offers Broadband operation from  30MHz to 2200MHz, and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, the MMRF5017HS is ideally suited for CW (Continuous Wave), Pulse, and Broadband RF applications.
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
型号 制造商 描述 库存 价格
MMRF5017HSR5
DISTI # V99:2348_18969828
NXP SemiconductorsGaN 2.2GHz 250W NI400S4S49
  • 50:$227.8200
  • 25:$228.2100
  • 10:$232.2400
  • 5:$237.0200
  • 1:$238.5600
MMRF5017HSR5
DISTI # V36:1790_18969828
NXP SemiconductorsGaN 2.2GHz 250W NI400S4S0
    MMRF5017HSR5
    DISTI # 568-13864-ND
    NXP SemiconductorsGAN 2.2GHZ 250W NI400S4S
    RoHS: Compliant
    Min Qty: 1
    Container: Tray
    50In Stock
    • 10:$228.7960
    • 1:$238.8900
    MMRF5017HSR5
    DISTI # 27009661
    NXP SemiconductorsGaN 2.2GHz 250W NI400S4S49
    • 50:$244.9065
    • 25:$245.3257
    • 10:$249.6580
    • 5:$254.7965
    • 1:$256.4520
    MMRF5017HSR5
    DISTI # MMRF5017HSR5
    Avnet, Inc.GaN 2.2GHz 250W NI400S4S (Alt: MMRF5017HSR5)
    RoHS: Compliant
    Min Qty: 50
    Europe - 0
    • 500:€207.4900
    • 300:€212.7900
    • 200:€219.8900
    • 100:€226.8900
    • 50:€231.0900
    MMRF5017HSR5
    DISTI # MMRF5017HSR5
    Avnet, Inc.GaN 2.2GHz 250W NI400S4S - Tape and Reel (Alt: MMRF5017HSR5)
    RoHS: Compliant
    Min Qty: 50
    Container: Reel
    Americas - 0
    • 500:$213.9900
    • 300:$218.0900
    • 200:$226.3900
    • 100:$235.5900
    • 50:$245.1900
    MMRF5017HSR5138
    DISTI # MMRF5017HSR5138
    Avnet, Inc.RF Power GaN Transistor N-Channel 125V 30MHz to 2200MHz 2-Pin NI-400S T/R - Bulk (Alt: MMRF5017HSR5138)
    Min Qty: 1
    Container: Bulk
    Americas - 0
      MMRF5017HSR5
      DISTI # 44AC0468
      NXP SemiconductorsWIDEBAND RF POWER GAN TRANSISTOR, 30-2200 MHZ, 125 W CW, 50 V REEL0
      • 25:$210.2900
      • 10:$223.7500
      • 5:$227.1200
      • 1:$230.4800
      MMRF5017HSR5.
      DISTI # 96AC1006
      NXP SemiconductorsWIDEBAND RF POWER GAN TRANSISTOR, 30-2200 MHZ, 125 W CW, 50 V ROHS COMPLIANT: YES0
      • 500:$213.9900
      • 300:$218.0900
      • 200:$226.3900
      • 100:$235.5900
      • 1:$245.1900
      MMRF5017HSR5
      DISTI # 771-MMRF5017HR5
      NXP SemiconductorsRF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
      RoHS: Compliant
      45
      • 1:$246.0700
      • 5:$240.5800
      • 10:$235.6600
      • 25:$232.1800
      • 50:$223.7500
      MMRF5017HSR5NXP SemiconductorsRF Power Field-Effect Transistor
      RoHS: Compliant
      50
      • 1000:$221.3600
      • 500:$233.0100
      • 100:$242.5800
      • 25:$252.9800
      • 1:$272.4400
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      可用性
      库存:
      45
      订购:
      2028
      输入数量:
      MMRF5017HSR5的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$246.07
      US$246.07
      5
      US$240.58
      US$1 202.90
      10
      US$235.66
      US$2 356.60
      25
      US$232.18
      US$5 804.50
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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