FCPF11N60T

Mfr. #:: FCPF11N60T
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 11A TO-220F
生命周期:: 制造商新产品。
数据表:: FCPF11N60T 数据表
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产品属性
属性值

制造商: 金融服务中心

产品分类: FET - 单

打包: 管子

单位重量: 0.080072 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 36 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 56 ns

上升时间: 98 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 11 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 320 mOhms

晶体管极性: N通道

典型关断延迟时间: 119 ns

典型开启延迟时间: 34 ns

正向跨导最小值: 9.7 S

通道模式: 增强

Tags: FCPF11N60, FCPF11, FCPF1, FCPF, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCPF11N60T 描述

***Semiconductor: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

***ical: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail

***i-Key: MOSFET N-CH 600V 11A TO-220F

***inecomponents.com: 600V N-Channel SuperFET

***eco: TO220F,SUPERFET <AZ

***ser: MOSFETs SUPERFET

***ark: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:16.7mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

型号	制造商	描述	库存	价格
FCPF11N60T DISTI # FCPF11N60T-ND	ON Semiconductor	MOSFET N-CH 600V 11A TO-220F RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call	1000:$1.4025
FCPF11N60T DISTI # FCPF11N60T	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: FCPF11N60T) RoHS: Compliant Min Qty: 275 Container: Bulk	Americas - 0	275:$1.0900 550:$1.0900 825:$1.0900 1375:$1.0900 2750:$1.0900
FCPF11N60T DISTI # FCPF11N60T	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail (Alt: FCPF11N60T) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.0129 500:€1.0499 100:€1.0909 50:€1.1349 25:€1.1819 10:€1.2889 1:€1.4179
FCPF11N60T DISTI # FCPF11N60T	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF11N60T) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$0.9429 6000:$0.9669 4000:$0.9799 2000:$0.9919 1000:$0.9989
FCPF11N60T DISTI # 86K1312	ON Semiconductor	SF1 600V 380MOHM E TO220F / TUBE	0	5000:$1.2200 2500:$1.2600 1000:$1.5600 500:$1.7400 100:$1.8800 10:$2.3400 1:$2.7500
FCPF11N60T DISTI # 512-FCPF11N60T	ON Semiconductor	MOSFET SUPERFET RoHS: Compliant	971	1:$2.5800 10:$2.1900 100:$1.7500 500:$1.5300 1000:$1.2700 2000:$1.1800 5000:$1.1400
FCPF11N60T	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	547	1000:$1.2000 500:$1.2600 100:$1.3100 25:$1.3700 1:$1.4700

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