IXFR36N60P

IXFR36N60P
Mfr. #:
IXFR36N60P
制造商:
Littelfuse
描述:
Darlington Transistors MOSFET 600V 20A
生命周期:
制造商新产品。
数据表:
IXFR36N60P 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IXFR36N60P 更多信息
产品属性
属性值
制造商
IXYS
产品分类
FET - 单
系列
IXFR36N60
打包
管子
单位重量
0.186952 oz
安装方式
贴片/贴片
商品名
超场效应晶体管
包装盒
TO-247-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
208 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
22 ns
上升时间
25 ns
VGS-栅极-源极-电压
30 V
Id 连续漏极电流
20 A
Vds-漏-源-击穿电压
600 V
Rds-On-Drain-Source-Resistance
200 mOhms
晶体管极性
N通道
典型关断延迟时间
80 ns
典型开启延迟时间
30 ns
正向跨导最小值
40 S
通道模式
增强
Tags
IXFR3, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 208 W 102 nC Silicon Through Hole Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
***ark
Mosfet, N, Isoplus247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
型号 制造商 描述 库存 价格
IXFR36N60P
DISTI # V99:2348_15878423
IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 1000:$6.4719
  • 500:$6.6650
  • 250:$7.2600
  • 100:$7.8930
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # IXFR36N60P-ND
IXYS CorporationMOSFET N-CH 600V 20A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$10.4633
IXFR36N60P
DISTI # 29727953
IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 2:$11.1080
IXFR36N60P
DISTI # 24M3022
IXYS CorporationMOSFET, N, ISOPLUS247,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:208W RoHS Compliant: Yes232
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
IXFR36N60P
DISTI # 747-IXFR36N60P
IXYS CorporationMOSFET 600V 20A
RoHS: Compliant
118
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
  • 1000:$7.2000
IXFR36N60P
DISTI # C1S331700021744
IXYS CorporationTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # 1300099
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
232
  • 1:£11.8900
  • 5:£11.3400
  • 10:£8.5100
  • 50:£7.9000
  • 100:£7.7200
IXFR36N60P
DISTI # 1300099
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
232
  • 1:$21.1000
  • 10:$19.0100
  • 25:$15.8100
  • 50:$14.6800
  • 100:$14.3600
  • 250:$13.1100
  • 500:$11.9500
  • 1000:$11.4000
图片 型号 描述
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
IXFR30N60P

Mfr.#: IXFR30N60P

OMO.#: OMO-IXFR30N60P

MOSFET 600V 30A
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P

MOSFET 20 Amps 800V 0.29 Rds
IXFR30N110P

Mfr.#: IXFR30N110P

OMO.#: OMO-IXFR30N110P-IXYS-CORPORATION

MOSFET N-CH 1100V 16A ISOPLUS247
IXFR32N100Q3

Mfr.#: IXFR32N100Q3

OMO.#: OMO-IXFR32N100Q3-IXYS-CORPORATION

MOSFET N-CH 1000V 23A ISOPLUS247
IXFR32N80P

Mfr.#: IXFR32N80P

OMO.#: OMO-IXFR32N80P-IXYS-CORPORATION

Darlington Transistors MOSFET 20 Amps 800V 0.29 Rds
IXFR36N60P

Mfr.#: IXFR36N60P

OMO.#: OMO-IXFR36N60P-IXYS-CORPORATION

Darlington Transistors MOSFET 600V 20A
IXFR36N50P

Mfr.#: IXFR36N50P

OMO.#: OMO-IXFR36N50P-IXYS-CORPORATION

Darlington Transistors MOSFET 500V 36A
IXFR32N50Q

Mfr.#: IXFR32N50Q

OMO.#: OMO-IXFR32N50Q-IXYS-CORPORATION

MOSFET 30 Amps 500V 0.15 Rds
IXFR32N80Q3

Mfr.#: IXFR32N80Q3

OMO.#: OMO-IXFR32N80Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
可用性
库存:
Available
订购:
4500
输入数量:
IXFR36N60P的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$9.71
US$9.71
10
US$9.22
US$92.22
100
US$8.74
US$873.71
500
US$8.25
US$4 125.85
1000
US$7.77
US$7 766.30
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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