TH58NVG2S3HBAI6

TH58NVG2S3HBAI6
Mfr. #:
TH58NVG2S3HBAI6
制造商:
Toshiba Memory
描述:
NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
生命周期:
制造商新产品。
数据表:
TH58NVG2S3HBAI6 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TH58NVG2S3HBAI6 更多信息
产品属性
属性值
制造商:
东芝
产品分类:
NAND闪存
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
VFBGA-67
内存大小:
4 Gbit
接口类型:
平行线
组织:
512 M x 8
数据总线宽度:
8 bit
电源电压 - 最小值:
2.7 V
电源电压 - 最大值:
3.6 V
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
打包:
托盘
内存类型:
NAND
品牌:
东芝内存
湿气敏感:
是的
产品类别:
NAND闪存
出厂包装数量:
210
子类别:
内存和数据存储
Tags
TH58NVG2S3HB, TH58NVG2S3H, TH58NVG2, TH58NVG, TH58NV, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TH58NVG Series 16GB CMOS NAND EEPROM
Toshiba TH58NVG Series 16GB CMOS Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) offers 3.3V and is organized as (4096+256) bytes x 64 pages x 8192 blocks. Program and read data is transferred between the register and the memory cell array in 4352-byte increments, granted through two 4352-byte static registers. I/O pins are utilized for both address and data input/output including command inputs through the TH58NVG Series serial type memory. Applications include image file memory for still cameras, solid-state file storage and voice recording.Learn More
图片 型号 描述
TH58NVG4S0FBAID

Mfr.#: TH58NVG4S0FBAID

OMO.#: OMO-TH58NVG4S0FBAID

NAND Flash 3.3V 16Gb 32nm ITemp SLC NAND (EEPROM)
TH58NVG3S0HBAI4

Mfr.#: TH58NVG3S0HBAI4

OMO.#: OMO-TH58NVG3S0HBAI4-TOSHIBA-MEMORY-AMERICA

Flash Memory 3.3V 8Gbit NAND EEPROM
TH58NVG1S3AXLKO

Mfr.#: TH58NVG1S3AXLKO

OMO.#: OMO-TH58NVG1S3AXLKO-1190

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TH58NVG2S3HTA00B4H

Mfr.#: TH58NVG2S3HTA00B4H

OMO.#: OMO-TH58NVG2S3HTA00B4H-1190

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TH58NVG3S0HTAI0_TRAY

Mfr.#: TH58NVG3S0HTAI0_TRAY

OMO.#: OMO-TH58NVG3S0HTAI0-TRAY-1151

NAND Flash Memory (Alt: TH58NVG3S0HTAI0_TRAY)
TH58NVG4D4CTG00

Mfr.#: TH58NVG4D4CTG00

OMO.#: OMO-TH58NVG4D4CTG00-1190

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TH58NVG4D4CXLM3

Mfr.#: TH58NVG4D4CXLM3

OMO.#: OMO-TH58NVG4D4CXLM3-1190

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TH58NVG7D2FTA20

Mfr.#: TH58NVG7D2FTA20

OMO.#: OMO-TH58NVG7D2FTA20-1190

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TH58NVG2S3HBAI4

Mfr.#: TH58NVG2S3HBAI4

OMO.#: OMO-TH58NVG2S3HBAI4-TOSHIBA-MEMORY-AMERICA

SLC NAND Flash 3.3V 4G-bit
TH58NVG2S3HTAI0-ND

Mfr.#: TH58NVG2S3HTAI0-ND

OMO.#: OMO-TH58NVG2S3HTAI0-ND-1190

全新原装
可用性
库存:
Available
订购:
1000
输入数量:
TH58NVG2S3HBAI6的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
210
US$4.10
US$861.00
420
US$4.08
US$1 713.60
630
US$3.82
US$2 406.60
1050
US$3.66
US$3 843.00
2520
US$3.43
US$8 643.60
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