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IKW30N65EL5XKSA1

IKW30N65EL5XKSA1
Mfr. #:
IKW30N65EL5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors 650V IGBT Trenchstop 5
生命周期:
制造商新产品。
数据表:
IKW30N65EL5XKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IKW30N65EL5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.05 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
85 A
Pd - 功耗：
227 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 L5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKW30N65EL5 SP001178080
单位重量：
1.340411 oz
Tags
IKW30N65E, IKW30N65, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
型号 制造商 描述 库存 价格
IKW30N65EL5XKSA1
DISTI # IKW30N65EL5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A FAST DIODE TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		321In Stock
  • 1200:$3.0529
  • 720:$3.6199
  • 240:$4.2523
  • 10:$5.1900
  • 1:$5.7800
IKW30N65EL5XKSA1
DISTI # IKW30N65EL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65EL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.8900
  • 480:$2.7900
  • 960:$2.6900
  • 1440:$2.5900
  • 2400:$2.5900
IKW30N65EL5XKSA1
DISTI # SP001178080		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001178080)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€2.5900
  • 10:€2.4900
  • 25:€2.4900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 1000:€2.1900
IKW30N65EL5XKSA1
DISTI # 12AC9674		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes622
  • 100:$4.8700
  • 50:$5.1000
  • 25:$5.3200
  • 10:$5.5500
  • 1:$6.4400
IKW30N65EL5XKSA1
DISTI # 726-IKW30N65EL5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		227
  • 1:$5.4900
  • 10:$4.6700
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4400
IKW30N65EL5XKSA1
DISTI # 2709886		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		622
  • 1200:$4.8400
  • 720:$5.7300
  • 240:$6.7300
  • 10:$8.2200
  • 1:$9.1500
IKW30N65EL5XKSA1
DISTI # 2709886		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		622
  • 500:£2.6800
  • 250:£3.0000
  • 100:£3.1500
  • 10:£3.6400
  • 1:£4.7300
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 MOSFET N-CH 300V 50A TO247AC
可用性
库存:
181
订购:
2164
输入数量:
IKW30N65EL5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$5.49
US$5.49
10
US$4.67
US$46.70
100
US$4.05
US$405.00
250
US$3.84
US$960.00
500
US$3.44
US$1 720.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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