BSC010N04LSTATMA1

BSC010N04LSTATMA1
Mfr. #:
BSC010N04LSTATMA1
制造商:
Infineon Technologies
描述:
DIFFERENTIATED MOSFETS
生命周期:
制造商新产品。
数据表:
BSC010N04LSTATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
BSC010N04LSTATMA1 更多信息
产品属性
属性值
Tags
BSC010N0, BSC010, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R
***ical
Trans MOSFET N-CH 40V 39A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 40 V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00085ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
型号 制造商 描述 库存 价格
BSC010N04LSTATMA1
DISTI # V72:2272_19084601
Infineon Technologies AGBSC010N04LST4593
  • 75000:$1.1034
  • 30000:$1.1374
  • 15000:$1.1714
  • 6000:$1.2055
  • 3000:$1.2395
  • 1000:$1.2735
  • 500:$1.3075
  • 250:$1.5192
  • 100:$1.5634
  • 50:$1.9948
  • 25:$2.0153
  • 10:$2.0357
  • 1:$2.6614
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4989In Stock
  • 1000:$1.3028
  • 500:$1.5724
  • 100:$1.9138
  • 10:$2.3810
  • 1:$2.6500
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4989In Stock
  • 1000:$1.3028
  • 500:$1.5724
  • 100:$1.9138
  • 10:$2.3810
  • 1:$2.6500
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.1340
BSC010N04LSTATMA1
DISTI # 29531925
Infineon Technologies AGBSC010N04LST4593
  • 6000:$1.2055
  • 3000:$1.2395
  • 1000:$1.2735
  • 500:$1.3075
  • 250:$1.5192
  • 100:$1.5634
  • 50:$1.9948
  • 25:$2.0153
  • 10:$2.0357
  • 7:$2.6614
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 40V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC010N04LSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$1.0549
  • 30000:$1.0739
  • 20000:$1.1119
  • 10000:$1.1529
  • 5000:$1.1969
BSC010N04LSTATMA1
DISTI # SP001657068
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON T/R (Alt: SP001657068)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€1.0539
  • 30000:€1.0959
  • 20000:€1.1309
  • 10000:€1.2189
  • 5000:€1.5689
BSC010N04LSTATMA1
DISTI # 93AC6979
Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes5000
  • 1000:$1.2100
  • 500:$1.4600
  • 250:$1.5700
  • 100:$1.6800
  • 50:$1.8100
  • 25:$1.9500
  • 10:$2.0900
  • 1:$2.4600
BSC010N04LSTATMA1
DISTI # 726-BSC010N04LSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
4960
  • 1:$2.4400
  • 10:$2.0700
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2000
BSC010N04LSTATMA1
DISTI # 2986390
Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON5000
  • 500:£1.0500
  • 250:£1.1300
  • 100:£1.2100
  • 10:£1.5000
  • 1:£1.9900
BSC010N04LSTATMA1
DISTI # 2986390
Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON
RoHS: Compliant
5000
  • 1000:$1.7000
  • 500:$1.7500
  • 250:$1.9400
  • 100:$2.0700
  • 10:$2.5300
  • 1:$3.3000
图片 型号 描述
BSC010N04LS6ATMA1

Mfr.#: BSC010N04LS6ATMA1

OMO.#: OMO-BSC010N04LS6ATMA1

MOSFET
BSC010N04LSTATMA1

Mfr.#: BSC010N04LSTATMA1

OMO.#: OMO-BSC010N04LSTATMA1

MOSFET DIFFERENTIATED MOSFETS
BSC010N04LSATMA1

Mfr.#: BSC010N04LSATMA1

OMO.#: OMO-BSC010N04LSATMA1

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSC010N04LS

Mfr.#: BSC010N04LS

OMO.#: OMO-BSC010N04LS

MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSC010N04LS

Mfr.#: BSC010N04LS

OMO.#: OMO-BSC010N04LS-1190

Trans MOSFET N-CH 40V 38A 8-Pin TDSON EP
BSC010N04LS.

Mfr.#: BSC010N04LS.

OMO.#: OMO-BSC010N04LS--1190

Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
BSC010N04LSATMA1

Mfr.#: BSC010N04LSATMA1

OMO.#: OMO-BSC010N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 100A TDSON-8
BSC010N04LSCATMA1

Mfr.#: BSC010N04LSCATMA1

OMO.#: OMO-BSC010N04LSCATMA1-INFINEON-TECHNOLOGIES

DIFFERENTIATED MOSFETS
BSC010N04LSTATMA1

Mfr.#: BSC010N04LSTATMA1

OMO.#: OMO-BSC010N04LSTATMA1-INFINEON-TECHNOLOGIES

DIFFERENTIATED MOSFETS
BSC010N04LS6ATMA1

Mfr.#: BSC010N04LS6ATMA1

OMO.#: OMO-BSC010N04LS6ATMA1-INFINEON-TECHNOLOGIES

TRENCH <= 40V
可用性
库存:
Available
订购:
4500
输入数量:
BSC010N04LSTATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.75
US$1.75
10
US$1.66
US$16.64
100
US$1.58
US$157.69
500
US$1.49
US$744.65
1000
US$1.40
US$1 401.70
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
从...开始
最新产品
  • IR1167S SmartRectifier™ Control IC
    IR1167S SmartRectifier is a secondary side-driver IC designed to drive N-Channel power MOSFETs, used as synchronous rectifiers in isolated Flyback converters
  • XDPL8218 Voltage Flyback IC
    Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
  • High Current IR3847 Gen3 SupIRBuck®
    IR3847 features a proprietary modulator scheme that reduces jitter by 90% compared to standard solutions
  • IR3823 Integrated Voltage Regulator
    Featuring constant frequency and virtually jitter-free operation with synchronization capability, the new device is well suited to noise-sensitive applications.
  • µIPM™ Integrated Power Module
    µIPM modules are the smallest in the industry, making them suitable for applications that are space-constrained
Top