IPI029N06NAKSA1

IPI029N06NAKSA1
Mfr. #:
IPI029N06NAKSA1
制造商:
Infineon Technologies
描述:
Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
生命周期:
制造商新产品。
数据表:
IPI029N06NAKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IPI029N06NAKSA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
IPI029N06
打包
管子
部分别名
IPI029N06N IPI029N06NXK SP000962134
单位重量
0.084199 oz
安装方式
通孔
商品名
优化MOS
包装盒
TO-262-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
136 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
8 ns
上升时间
15 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
100 A
Vds-漏-源-击穿电压
60 V
VGS-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
2.9 mOhms
晶体管极性
N通道
典型关断延迟时间
30 ns
典型开启延迟时间
17 ns
Qg-门电荷
56 nC
正向跨导最小值
160 S
Tags
IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262
***et
Trans MOSFET N-CH 60V 100A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 24A TO262-3
***ronik
N-CH 60V 100A 2,9mOhm TO262-3
***ark
Mosfet, N-Ch, 60V, 100A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 100A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):2.8V; Tensione di Soglia Vgs:10V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
型号 制造商 描述 库存 价格
IPI029N06NAKSA1
DISTI # 29709233
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
1000
  • 500:$1.0464
  • 100:$1.1904
  • 15:$1.4880
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1-ND
Infineon Technologies AGMOSFET N-CH 60V 24A TO262-3
RoHS: Compliant
Min Qty: 1
Container: Tube
417In Stock
  • 1000:$0.9870
  • 500:$1.1912
  • 100:$1.5315
  • 10:$1.9060
  • 1:$2.1100
IPI029N06NAKSA1
DISTI # C1S322000334748
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
1000
  • 1000:$0.9020
  • 500:$1.1700
  • 100:$1.2800
  • 25:$1.5600
  • 5:$1.9200
IPI029N06NAKSA1
DISTI # SP000962134
Infineon Technologies AGMV POWER MOS (Alt: SP000962134)
RoHS: Compliant
Min Qty: 1
Europe - 56000
  • 1:€1.2629
  • 10:€0.9849
  • 25:€0.8799
  • 50:€0.8009
  • 100:€0.7769
  • 500:€0.7609
  • 1000:€0.7509
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1
Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$0.7129
  • 1000:$0.6869
  • 2000:$0.6619
  • 3000:$0.6399
  • 5000:$0.6279
IPI029N06NAKSA1
DISTI # 34AC1699
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes459
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
20868
  • 1000:$1.1200
  • 500:$1.1800
  • 100:$1.2300
  • 25:$1.2800
  • 1:$1.3800
IPI029N06N
DISTI # 726-IPI029N06N
Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant
485
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1
DISTI # 726-IPI029N06NAKSA1
Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant
315
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
IPI029N06NAKSA1
DISTI # 2781091
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant
459
  • 1:£1.9300
  • 10:£1.5300
  • 100:£1.2300
  • 250:£1.0900
  • 500:£0.9560
IPI029N06NAKSA1
DISTI # 2781091
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant
459
  • 1:$3.4000
  • 10:$2.9600
  • 100:$2.4100
  • 250:$2.0400
  • 500:$1.7600
  • 1000:$1.6700
IPI029N06NAKSA1
DISTI # XSKDRABV0021253
INF 
RoHS: Compliant
500
  • 500:$1.4600
图片 型号 描述
IPI029N06N

Mfr.#: IPI029N06N

OMO.#: OMO-IPI029N06N

MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06NAKSA1

Mfr.#: IPI029N06NAKSA1

OMO.#: OMO-IPI029N06NAKSA1

MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06N

Mfr.#: IPI029N06N

OMO.#: OMO-IPI029N06N-1190

MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06NAKSA1

Mfr.#: IPI029N06NAKSA1

OMO.#: OMO-IPI029N06NAKSA1-INFINEON-TECHNOLOGIES

Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
可用性
库存:
Available
订购:
5000
输入数量:
IPI029N06NAKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.94
US$0.94
10
US$0.89
US$8.95
100
US$0.85
US$84.77
500
US$0.80
US$400.30
1000
US$0.75
US$753.50
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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