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IRFU3410PBF

IRFU3410PBF
Mfr. #:
IRFU3410PBF
制造商:
Infineon Technologies
描述:
Darlington Transistors MOSFET MOSFT 100V 31A 39mOhm 37nC
生命周期:
制造商新产品。
数据表:
IRFU3410PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU3410PBF DatasheetIRFU3410PBF Datasheet (P4-P6)IRFU3410PBF Datasheet (P7-P9)IRFU3410PBF Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商
I
产品分类
FET - 单
打包
管子
单位重量
0.139332 oz
安装方式
通孔
包装盒
IPAK-3
技术
硅
通道数
1 Channel
晶体管型
1 N-Channel
钯功耗
110 W
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
31 A
Vds-漏-源-击穿电压
100 V
Rds-On-Drain-Source-Resistance
39 mOhms
晶体管极性
N通道
Qg-门电荷
37 nC
Tags
IRFU3410P, IRFU3410, IRFU34, IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IRFU3410PBF
DISTI # 21065072		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube3931
  • 2500:$0.3196
  • 1000:$0.3290
  • 500:$0.3389
  • 250:$0.3495
  • 100:$0.3608
  • 33:$0.3728
IRFU3410PBF
DISTI # IRFU3410PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 31A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2915In Stock
  • 1000:$0.4744
  • 500:$0.6009
  • 100:$0.7748
  • 10:$0.9800
  • 1:$1.1100
IRFU3410PBF
DISTI # C1S322000496844		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3931
  • 1000:$0.5240
  • 500:$0.5710
  • 100:$0.6950
  • 50:$0.7790
  • 25:$0.8570
  • 5:$2.1400
IRFU3410PBF
DISTI # IRFU3410PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU3410PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.3309
  • 6000:$0.3189
  • 12000:$0.3069
  • 18000:$0.2969
  • 30000:$0.2919
IRFU3410PBF
DISTI # SP001578398		Infineon Technologies AGTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK (Alt: SP001578398)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.9489
  • 10:€0.8119
  • 25:€0.8099
  • 50:€0.8079
  • 100:€0.6209
  • 500:€0.5479
  • 1000:€0.4329
IRFU3410PBF
DISTI # 70018370		Infineon Technologies AGIRFU3410PBF N-channel MOSFET Transistor,31 A,100 V,3-Pin IPAK
RoHS: Compliant		0
  • 15:$1.6400
IRFU3410PBF
DISTI # 942-IRFU3410PBF		Infineon Technologies AGMOSFET MOSFT 100V 31A 39mOhm 37nC
RoHS: Compliant		147
  • 1:$1.1100
  • 10:$0.9450
  • 100:$0.7260
  • 500:$0.6410
  • 1000:$0.5060
  • 2500:$0.4490
IRFU3410PBFInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		1050
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
IRFU3410PBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		73
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
IRFU3410PBF
DISTI # 9075107P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 100V 31A IPAK, TU2145
  • 150:£0.5440
IRFU3410PBF
DISTI # 8659028		Infineon Technologies AGMOSFET, N, 100V, 31A, I-PAK
RoHS: Compliant		0
  • 1:$1.7600
  • 10:$1.5000
  • 100:$1.1500
  • 500:$1.0200
  • 1000:$0.8020
  • 2500:$0.7110
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IRFU3711ZPBF

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IRFU3504ZPBF

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IRFU3711PBF

Mfr.#: IRFU3711PBF

OMO.#: OMO-IRFU3711PBF-INFINEON-TECHNOLOGIES

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IRFU3303PBF

Mfr.#: IRFU3303PBF

OMO.#: OMO-IRFU3303PBF-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET MOSFT 30V 33A 31mOhm 29nC
IRFU3707ZPBF

Mfr.#: IRFU3707ZPBF

OMO.#: OMO-IRFU3707ZPBF-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC
IRFU320

Mfr.#: IRFU320

OMO.#: OMO-IRFU320-VISHAY

 MOSFET N-CH 400V 3.1A I-PAK
IRFU3411

Mfr.#: IRFU3411

OMO.#: OMO-IRFU3411-1190

 全新原装
IRFU3910PBF,IRFU3910,FU3

Mfr.#: IRFU3910PBF,IRFU3910,FU3

OMO.#: OMO-IRFU3910PBF-IRFU3910-FU3-1190

 全新原装
可用性
库存:
Available
订购:
3000
输入数量:
IRFU3410PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.42
US$0.42
10
US$0.40
US$3.97
100
US$0.38
US$37.65
500
US$0.36
US$177.80
1000
US$0.33
US$334.70
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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