IRF540ZSPBF

Mfr. #:: IRF540ZSPBF
制造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
生命周期:: 制造商新产品。
数据表:: IRF540ZSPBF 数据表
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HTML Datasheet:: IRF540ZSPBF Datasheet IRF540ZSPBF Datasheet (P4-P6)IRF540ZSPBF Datasheet (P7-P9)IRF540ZSPBF Datasheet (P10-P12)
ECAD Model:

产品属性
属性值

制造商: 红外线

产品分类: FET - 单

打包: 管子

单位重量: 0.139332 oz

安装方式: 贴片/贴片

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 92 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 39 ns

上升时间: 51 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 36 A

Vds-漏-源-击穿电压: 100 V

Rds-On-Drain-Source-Resistance: 26.5 mOhms

晶体管极性: N通道

典型关断延迟时间: 43 ns

典型开启延迟时间: 15 ns

Qg-门电荷: 42 nC

通道模式: 增强

Tags: IRF540ZS, IRF540Z, IRF540, IRF54, IRF5, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF540ZSPBF 描述

***ure Electronics: IRF540xx Series 100 V 26.5 mOhm 36 A HEXFET® Power MOSFET - D²PAK (TO-263AB)

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK T/R

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 92 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,D2Pak,PD 92W,VGS +/-20V

***roFlash: Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 100V, 36A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ohm; ID 42A; D2Pak; PD 160W; VGS +/-20V

***ponent Sense: Single N-Channel 100 V 160 W 110 nC Hexfet Power Mosfet Surface Mount - D2PAK

*** Source Electronics: Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 42A D2PAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1.0uF 35volts *Derate Voltage/Temp

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***icroelectronics: N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET

***ical: Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***eco: Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; D2Pak; PD 130W; VGS+/-20V

***ure Electronics: Single N-Channel 100 V 44 mOhm 71nC HEXFET® Power Mosfet - D2PAK

***fin: Transistor NPN Mos IRF540/IRF540NS INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***essParts.Net: INTERNATIONAL RECTIFIER IRF540NS / MOSFET N-CH 100V 33A D2PAK ITE

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W

***ment14 APAC: N CHANNEL MOSFET, 100V, 33A, D2-PAK; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:33A;

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N CH, 100V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.044ohm; Available until stocks are exhausted Alternative available

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:130W; No. of Pins:3Pins RoHS Compliant: Yes

***ure Electronics: Single N-Channel 100 V 77 mOhms Surface Mount Power Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation

***roFlash: Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***eco: Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

***emi: N-Channel Power MOSFET, QFET®, 100 V, 33 A, 52 mΩ, D2PAK

***ure Electronics: N-Channel 100 V 52 mOhm Surface Mount Mosfet - D2PAK-3

***enic: 100V 33A 127W 52m´Î@10V16.5A 4V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D2-PAK; Power Dissipation Pd:127W; Power Dissipation Pd:127W; Pulse Current Idm:132A; Rate of Voltage Change dv / dt:6V/ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***icroelectronics: N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STripFET MOSFET

***ure Electronics: N-channel 100 V 0.033 Ohm Surface Mount STripFET II Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 33 A, 52 mΩ, D2PAK

***ure Electronics: N Channel 100 V 52 mO 3.75 W QFET Mosfet Surface Mount - D2PAK-3

***ical: Trans MOSFET N-CH 100V 33A 3-Pin (2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 100V, 33A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 127W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***icroelectronics: N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET

***ure Electronics: N-Channel 100 V 0.045 Ohm Surface Mount STripFET II MosFet - D2PAK

***ical: Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N CHANNEL, 100V, 35A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 100V, 35A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Market price

型号	制造商	描述	库存	价格
IRF540ZSPBF DISTI # V36:1790_13889618	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	979	100:$1.1415 25:$1.2365 10:$1.3950 1:$1.5923
IRF540ZSPBF DISTI # IRF540ZSPBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 36A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF540ZSPBF DISTI # 29555610	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	979	100:$1.1415 25:$1.2365 10:$1.3950 9:$1.5923
IRF540ZSPBF DISTI # 70018224	Infineon Technologies AG	IRF540ZSPBF N-channel MOSFET Transistor,36 A,100 V,3-Pin D2PAK RoHS: Compliant	0	750:$2.2400 1500:$1.9700
IRF540ZSPBF DISTI # 942-IRF540ZSPBF	Infineon Technologies AG	MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC RoHS: Compliant	0
IRF540ZSPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-263AB	63	44:$1.0500 13:$1.7500 1:$2.8000
IRF540ZSPBF	International Rectifier	RoHS: Compliant	Europe - 126
IRF540ZSTRLPBF DISTI # IRF540ZSPBF-GURT	Infineon Technologies AG	N-Ch 100V 36A 92W 0,0265R DPak RoHS: Compliant	0	10:€0.6860 50:€0.4160 200:€0.3260 500:€0.3140
IRF540ZSPBF DISTI # C1S322000519145	Infineon Technologies AG	MOSFETs	979	100:$1.1415 25:$1.2365 10:$1.3950 1:$1.5923
IRF540ZSPBF DISTI # 8657700	Infineon Technologies AG	MOSFET, N, 100V, 36A, D2-PAK RoHS: Compliant	0	1:$1.9800 10:$1.7700 100:$1.3800 500:$1.1400

图片	型号	描述
	Mfr.#: IRF540ZLPBF OMO.#: OMO-IRF540ZLPBF	MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
	Mfr.#: IRF540STRR OMO.#: OMO-IRF540STRR-VISHAY	MOSFET N-CH 100V 28A D2PAK
	Mfr.#: IRF540ZSTRR OMO.#: OMO-IRF540ZSTRR-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 36A D2PAK
	Mfr.#: IRF540ATM OMO.#: OMO-IRF540ATM-1190	全新原装
	Mfr.#: IRF540NSTRLPBF,IRF540NS, OMO.#: OMO-IRF540NSTRLPBF-IRF540NS--1190	全新原装
	Mfr.#: IRF540NSTRR OMO.#: OMO-IRF540NSTRR-1190	HEXFET N-CH MOSFET 33A 100V D2PAK, PK
	Mfr.#: IRF540STRPBF OMO.#: OMO-IRF540STRPBF-1190	全新原装
	Mfr.#: IRF5410 OMO.#: OMO-IRF5410-1190	全新原装
	Mfr.#: IRF541FI OMO.#: OMO-IRF541FI-1190	全新原装
	Mfr.#: IRF542NPBF OMO.#: OMO-IRF542NPBF-1190	全新原装

IRF540ZSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes