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IPB65R190CFD

IPB65R190CFD
Mfr. #:
IPB65R190CFD
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 650V 17.5A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R190CFDATMA1)
生命周期:
制造商新产品。
数据表:
IPB65R190CFD 数据表
交货:
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ECAD Model:
更多信息:
IPB65R190CFD 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
CoolMOS CFD2
打包
卷轴
部分别名
IPB65R190CFDATMA1 IPB65R190CFDXT SP000905378
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
酷摩
包装盒
TO-252-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
151 W
秋季时间
6.4 ns
上升时间
8.4 ns
VGS-栅极-源极-电压
30 V
Id 连续漏极电流
17.5 A
Vds-漏-源-击穿电压
650 V
VGS-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
190 mOhms
晶体管极性
N通道
Qg-门电荷
68 nC
Tags
IPB65R190CF, IPB65R19, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB65R190CFDAATMA1
DISTI # V36:1790_06378135		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB65R190CFDATMA1
    DISTI # V36:1790_06377479    		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 5000:$1.2960
    • 2000:$1.3970
    • 1000:$1.4110
    IPB65R190CFDATMA1
    DISTI # V72:2272_06377479    		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
      IPB65R190CFDATMA1
      DISTI # IPB65R190CFDATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO263
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		On Order
      • 1000:$1.7092
      IPB65R190CFDATMA1
      DISTI # IPB65R190CFDATMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 500:$2.0875
      • 100:$2.5779
      • 10:$3.1440
      • 1:$3.5200
      IPB65R190CFDATMA1
      DISTI # IPB65R190CFDATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 500:$2.0875
      • 100:$2.5779
      • 10:$3.1440
      • 1:$3.5200
      IPB65R190CFDATMA2
      DISTI # IPB65R190CFDATMA2-ND      		Infineon Technologies AGHIGH POWER_LEGACY
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$1.7092
      IPB65R190CFDAATMA1
      DISTI # IPB65R190CFDAATMA1-ND      		Infineon Technologies AGMOSFET N-CH TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$2.1215
      IPB65R190CFD
      DISTI # IPB65R190CFDATMA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R190CFDATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$1.4900
      • 2000:$1.4900
      • 4000:$1.3900
      • 6000:$1.3900
      • 10000:$1.3900
      IPB65R190CFD
      DISTI # IPB65R190CFD      		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-263 T/R (Alt: IPB65R190CFD)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Asia - 0
        IPB65R190CFD
        DISTI # SP000905378        		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-263 T/R (Alt: SP000905378)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Europe - 0
        • 1000:€1.7900
        • 2000:€1.4900
        • 4000:€1.3900
        • 6000:€1.2900
        • 10000:€1.1900
        IPB65R190CFDATMA2
        DISTI # IPB65R190CFDATMA2        		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R190CFDATMA2)
        RoHS: Compliant
        Min Qty: 1000
        Container: Reel        		Americas - 0
        • 1000:$1.4900
        • 2000:$1.4900
        • 4000:$1.3900
        • 6000:$1.3900
        • 10000:$1.3900
        IPB65R190CFDAATMA1
        DISTI # IPB65R190CFDAATMA1        		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R190CFDAATMA1)
        RoHS: Compliant
        Min Qty: 1000
        Container: Reel        		Americas - 0
        • 1000:$1.8900
        • 2000:$1.8900
        • 4000:$1.7900
        • 6000:$1.6900
        • 10000:$1.6900
        IPB65R190CFDAATMA1
        DISTI # SP000928264        		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928264)
        RoHS: Compliant
        Min Qty: 1000        		Europe - 0
        • 1000:€2.3900
        • 2000:€1.8900
        • 4000:€1.6900
        • 6000:€1.6900
        • 10000:€1.4900
        IPB65R190CFD
        DISTI # 726-IPB65R190CFD        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2
        RoHS: Compliant        		11
        • 1:$2.9300
        • 10:$2.4900
        • 100:$2.1600
        • 250:$2.0500
        • 500:$1.8400
        • 1000:$1.5500
        • 2000:$1.4700
        • 5000:$1.4200
        IPB65R190CFDATMA1
        DISTI # 726-IPB65R190CFDATMA        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2
        RoHS: Compliant        		0
        • 1:$2.9300
        • 10:$2.4900
        • 100:$2.1600
        • 250:$2.0500
        • 500:$1.8400
        • 1000:$1.5500
        • 2000:$1.4700
        • 5000:$1.4200
        IPB65R190CFDATMA2
        DISTI # 726-IPB65R190CFDATM2        		Infineon Technologies AGMOSFET
        RoHS: Compliant        		0
        • 1000:$1.5500
        • 2000:$1.4700
        • 5000:$1.4200
        IPB65R190CFDAATMA1
        DISTI # 726-IPB65R190CFDAATM        		Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
        RoHS: Compliant        		105
        • 1:$3.6400
        • 10:$3.1000
        • 100:$2.6800
        • 250:$2.5400
        • 500:$2.2800
        • 1000:$1.9200
        • 2000:$1.8300
        IPB65R190CFDA
        DISTI # 726-IPB65R190CFDA        		Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
        RoHS: Compliant        		0
        • 1:$3.6400
        • 10:$3.1000
        • 100:$2.6800
        • 250:$2.5400
        • 500:$2.2800
        • 1000:$1.9200
        • 2000:$1.8300
        IPB65R190CFDA
        DISTI # TMOSP10816        		Infineon Technologies AGN-CH 650V18A190mOhm TO263-3
        RoHS: Compliant        		Stock DE - 0Stock HK - 0Stock US - 0
        • 1000:$2.8300
        IPB65R190CFDATMA1
        DISTI # 2443391RL        		Infineon Technologies AGMOSFET, N CH, 700V, 17.5A, TO-263-3
        RoHS: Compliant        		0
        • 2000:$2.2200
        • 1000:$2.3400
        • 500:$2.7700
        • 250:$3.0900
        • 100:$3.2600
        • 10:$3.7500
        • 1:$4.4200
        IPB65R190CFDATMA1
        DISTI # 2443391        		Infineon Technologies AGMOSFET, N CH, 700V, 17.5A, TO-263-3
        RoHS: Compliant        		0
        • 2000:$2.2200
        • 1000:$2.3400
        • 500:$2.7700
        • 250:$3.0900
        • 100:$3.2600
        • 10:$3.7500
        • 1:$4.4200
        IPB65R190CFDATMA1
        DISTI # 2443391        		Infineon Technologies AGMOSFET, N CH, 700V, 17.5A, TO-263-3
        RoHS: Compliant        		0
        • 500:£1.4400
        • 250:£1.5900
        • 100:£1.6800
        • 10:£1.9400
        • 1:£2.5800
        图片 型号 描述
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        Mfr.#: IPB65R660CFDAATMA1

        OMO.#: OMO-IPB65R660CFDAATMA1

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        Mfr.#: IPB65R099C6ATMA1

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        Mfr.#: IPB65R110CFDATMA2

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        OMO.#: OMO-IPB65R380C6ATMA1-INFINEON-TECHNOLOGIES

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        IPB65R660CFDAXT

        Mfr.#: IPB65R660CFDAXT

        OMO.#: OMO-IPB65R660CFDAXT-1190

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        IPB65R150CFDA 65F6150A

        Mfr.#: IPB65R150CFDA 65F6150A

        OMO.#: OMO-IPB65R150CFDA-65F6150A-1190

        		 全新原装
        IPB65R190C7

        Mfr.#: IPB65R190C7

        OMO.#: OMO-IPB65R190C7-1190

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        IPB65R225C7ATMA1

        Mfr.#: IPB65R225C7ATMA1

        OMO.#: OMO-IPB65R225C7ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-Ch 700V 41A D2PAK-2
        IPB65R190C7ATMA1

        Mfr.#: IPB65R190C7ATMA1

        OMO.#: OMO-IPB65R190C7ATMA1-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET N-Ch 700V 49A D2PAK-2
        可用性
        库存:
        Available
        订购:
        4500
        输入数量:
        IPB65R190CFD的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$2.03
        US$2.03
        10
        US$1.93
        US$19.27
        100
        US$1.83
        US$182.56
        500
        US$1.72
        US$862.05
        1000
        US$1.62
        US$1 622.70
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