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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BUZ342 | Infineon Technologies AG | Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | 375 |
| 图片 | 型号 | 描述 |
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Mfr.#: BUZ100SLE3045A OMO.#: OMO-BUZ100SLE3045A-1190 |
全新原装 |
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Mfr.#: BUZ304 OMO.#: OMO-BUZ304-1190 |
全新原装 |
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Mfr.#: BUZ354 OMO.#: OMO-BUZ354-1190 |
全新原装 |
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Mfr.#: BUZ40 OMO.#: OMO-BUZ40-1190 |
全新原装 |
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Mfr.#: BUZ54A OMO.#: OMO-BUZ54A-1190 |
全新原装 |
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Mfr.#: BUZ83 OMO.#: OMO-BUZ83-1190 |
全新原装 |
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Mfr.#: BUZ88 OMO.#: OMO-BUZ88-1190 |
全新原装 |
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Mfr.#: BUZ901D OMO.#: OMO-BUZ901D-1190 |
N CHANNEL MOSFET, 200V, 16A, TO-3, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.75ohm, Rds(on) Test Voltage Vgs:-, Thres |
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Mfr.#: BUZ90AF BUZ90A OMO.#: OMO-BUZ90AF-BUZ90A-1190 |
全新原装 |
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Mfr.#: BUZ91A-E3162 OMO.#: OMO-BUZ91A-E3162-1190 |
全新原装 |