IS43R16800E-5TLI

Mfr. #:: IS43R16800E-5TLI
制造商:: ISSI
描述:: DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
生命周期:: 制造商新产品。
数据表:: IS43R16800E-5TLI 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: IS43R16800E-5TLI 更多信息

产品属性
属性值

制造商：: 国际空间站

产品分类：: 动态随机存取存储器

RoHS：: Y

类型：: SDRAM - DDR1

数据总线宽度：: 16 bit

组织：: 8 M x 16

包装/案例：: TSOP-66

内存大小：: 128 Mbit

最大时钟频率：: 200 MHz

访问时间：: 5 ns

电源电压 - 最大值：: 2.7 V

电源电压 - 最小值：: 2.3 V

电源电流 - 最大值：: 240 mA

最低工作温度：: - 40 C

最高工作温度：: + 85 C

系列：: IS43R16800E

打包：: 托盘

品牌：: 国际空间站

安装方式：: 贴片/贴片

湿气敏感：: 是的

工作电源电压：: 2.5 V

产品类别：: 动态随机存取存储器

出厂包装数量：: 108

子类别：: 内存和数据存储

单位重量：: 0.019612 oz

Tags: IS43R16800E-5TLI, IS43R16800E-5, IS43R16800E, IS43R168, IS43R1, IS43R, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43R16800E-5TLI 评级和评论

G***e

Some resistors are broken, packed uncertainly

2019-07-31

V***D

The goods came in a month, everything is fine.

2019-09-14

V***r

to be checked its performence. qty is ok

2019-05-17

IS43R16800E-5TLI 描述

***et Europe: DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II

***I SCT: DDR SDRAM, 8Mx16, 2.5V, 4K, TSOP2-66,RoHS

***NGYU ELECTRONICS: IC DRAM 128M PARALLEL 66TSOP II

IS43R16800E-5TLI 更多信息

DDR SDRAM: ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More

IS43R32800D 8Mx32 256-Mbit DDR SDRAM: ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.

Market price

型号	制造商	描述	库存	价格
IS43R16800E-5TLI DISTI # IS43R16800E-5TLI-ND	Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 432 Container: Tray	Temporarily Out of Stock	432:$2.4482
IS43R16800E-5TLI-TR DISTI # IS43R16800E-5TLI-TR-ND	Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$2.2716
IS43R16800E-5TLI DISTI # IS43R16800E-5TLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II (Alt: IS43R16800E-5TLI) RoHS: Compliant Min Qty: 1	Europe - 956	1:€2.7900 10:€2.7900 25:€2.7900 50:€2.7900 100:€2.7900 500:€2.7900 1000:€2.7900
IS43R16800E-5TLI DISTI # IS43R16800E-5TLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II - Tape and Reel (Alt: IS43R16800E-5TLI) RoHS: Compliant Min Qty: 432 Container: Reel	Americas - 0	432:$2.0900 648:$1.9900 1080:$1.8900 2160:$1.7900 4320:$1.7900
IS43R16800E-5TLI-TR DISTI # IS43R16800E-5TLI-TR	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II T/R - Tape and Reel (Alt: IS43R16800E-5TLI-TR) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$2.0900 3000:$1.9900 6000:$1.8900 9000:$1.7900 15000:$1.7900
IS43R16800E-5TLI DISTI # 870-IS43R16800E5TLTR	Integrated Silicon Solution Inc	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM RoHS: Compliant	64	1:$3.0900 10:$2.8000 25:$2.7300 100:$2.4400 250:$2.4300
IS43R16800E-5TLI-TR DISTI # 870-IS43R168006TLITR	Integrated Silicon Solution Inc	DRAM 128M (8Mx16) 200MHz DDR 2.5v RoHS: Compliant	0	1500:$2.1300

相关产品

图片	型号	描述
	Mfr.#: S25FL256SAGNFI001 OMO.#: OMO-S25FL256SAGNFI001	NOR Flash 256Mb 3V 133MHz Serial NOR Flash
	Mfr.#: MBRS140T3G OMO.#: OMO-MBRS140T3G	Schottky Diodes & Rectifiers 1A 40V
	Mfr.#: AP1084D33G-13 OMO.#: OMO-AP1084D33G-13	LDO Voltage Regulators LDO BIPOLAR 5A 3.3V
	Mfr.#: TPS76801QDR OMO.#: OMO-TPS76801QDR	LDO Voltage Regulators Micropower LDO Reg
	Mfr.#: FI-X30SSLA-HF-R2500 OMO.#: OMO-FI-X30SSLA-HF-R2500	FFC & FPC Connectors PBC 2 CBL CON 30 SKT CONT MNT HT 1MM
	Mfr.#: V10E140P OMO.#: OMO-V10E140P	Varistors 140V 10mm Epoxy UltraMOV
	Mfr.#: FI-X30SSLA-HF-R2500 OMO.#: OMO-FI-X30SSLA-HF-R2500-JAE-ELECTRONICS	CONN RCPT 30P 0.039 GOLD SMD R/A
	Mfr.#: V10E140P OMO.#: OMO-V10E140P-LITTELFUSE	Varistors 140Vrms 3500A 400pF 10mm Disc
	Mfr.#: AP1084D33G-13 OMO.#: OMO-AP1084D33G-13-DIODES-INCORPORATED	LDO Voltage Regulators LDO BIPOLAR 5A 3.3V
	Mfr.#: TPS76801QDR OMO.#: OMO-TPS76801QDR-TEXAS-INSTRUMENTS	LDO Voltage Regulators Micropower LDO Reg