NSBA114TDXV6T1G

NSBA114TDXV6T1G
Mfr. #:
NSBA114TDXV6T1G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
生命周期:
制造商新产品。
数据表:
NSBA114TDXV6T1G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - 预偏置
RoHS:
Y
配置:
双重的
晶体管极性:
PNP
典型输入电阻:
10 kOhms
安装方式:
贴片/贴片
包装/案例:
SOT-563-6
DC 集电极/基极增益 hfe 最小值:
160
集电极-发射极电压 VCEO 最大值:
50 V
连续集电极电流:
- 0.1 A
峰值直流集电极电流:
100 mA
Pd - 功耗:
357 mW
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
NSBA114TDXV6
打包:
卷轴
直流电流增益 hFE 最大值:
160
高度:
0.55 mm
长度:
1.6 mm
宽度:
1.2 mm
品牌:
安森美半导体
产品类别:
BJT - 双极晶体管 - 预偏置
出厂包装数量:
4000
子类别:
晶体管
单位重量:
0.000106 oz
Tags
NSBA114TDX, NSBA114TD, NSBA114T, NSBA114, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
Dual PNP Bipolar Digital Transistor (BRT)
***et
Trans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R
***ark
Brt Transistor, 50V, 10Kohm, Sot-563-6; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 4.7Kohm, Sot--563, Full Reel; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 10Kohm, Sot-563-6; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***emi
Dual PNP Bipolar Digital Transistor (BRT)
***Yang
Trans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
***ponent Stockers USA
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 4.7Kohm, Sot-563-6; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
型号 制造商 描述 库存 价格
NSBA114TDXV6T1G
DISTI # NSBA114TDXV6T1GOSCT-ND
ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    NSBA114TDXV6T1G
    DISTI # NSBA114TDXV6T1GOSTR-ND
    ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 4000:$0.1040
    NSBA114TDXV6T1G
    DISTI # NSBA114TDXV6T1G
    ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA114TDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel
    Americas - 0
    • 80000:$0.0739
    • 40000:$0.0749
    • 24000:$0.0759
    • 16000:$0.0769
    • 8000:$0.0779
    NSBA114TDXV6T1G
    DISTI # NSBA114TDXV6T1G
    ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Bulk (Alt: NSBA114TDXV6T1G)
    RoHS: Compliant
    Min Qty: 3572
    Container: Bulk
    Americas - 0
    • 35720:$0.0859
    • 17860:$0.0879
    • 10716:$0.0889
    • 7144:$0.0899
    • 3572:$0.0909
    NSBA114TDXV6T1G
    DISTI # 42K2297
    ON SemiconductorBRT TRANSISTOR, 50V, 10KOHM, SOT-563-6,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:-,No. of Pins:6 PinRoHS Compliant: Yes0
    • 30000:$0.0780
    • 18000:$0.0860
    • 12000:$0.0930
    • 6000:$0.1040
    • 3000:$0.1190
    • 1:$0.1260
    NSBA114TDXV6T1G
    DISTI # 49X8914
    ON SemiconductorBRT TRANSISTOR, 50V, 10KOHM, SOT-563-6,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:-,No. of Pins:6 PinRoHS Compliant: Yes0
    • 2500:$0.1070
    • 1000:$0.1260
    • 500:$0.1550
    • 250:$0.1820
    • 100:$0.2160
    • 50:$0.2580
    • 25:$0.3090
    • 1:$0.4030
    NSBA114TDXV6T1G
    DISTI # 863-NSBA114TDXV6T1G
    ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    RoHS: Compliant
    8000
    • 1:$0.3400
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
    NSBA114TDXV6T1GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
    RoHS: Compliant
    96000
    • 1000:$0.0900
    • 100:$0.1000
    • 500:$0.1000
    • 1:$0.1100
    • 25:$0.1100
    图片 型号 描述
    NSBA114TDXV6T5G

    Mfr.#: NSBA114TDXV6T5G

    OMO.#: OMO-NSBA114TDXV6T5G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114YDXV6T1G

    Mfr.#: NSBA114YDXV6T1G

    OMO.#: OMO-NSBA114YDXV6T1G

    Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114TF3T5G

    Mfr.#: NSBA114TF3T5G

    OMO.#: OMO-NSBA114TF3T5G

    Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
    NSBA114EDXV6T5

    Mfr.#: NSBA114EDXV6T5

    OMO.#: OMO-NSBA114EDXV6T5

    Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114EDP6T5G , FDH3595

    Mfr.#: NSBA114EDP6T5G , FDH3595

    OMO.#: OMO-NSBA114EDP6T5G-FDH3595-1190

    全新原装
    NSBA114EDV6T1

    Mfr.#: NSBA114EDV6T1

    OMO.#: OMO-NSBA114EDV6T1-1190

    全新原装
    NSBA114EDXV6T5G

    Mfr.#: NSBA114EDXV6T5G

    OMO.#: OMO-NSBA114EDXV6T5G-ON-SEMICONDUCTOR

    TRANS 2PNP PREBIAS 0.5W SOT563
    NSBA114TDXV6T1G

    Mfr.#: NSBA114TDXV6T1G

    OMO.#: OMO-NSBA114TDXV6T1G-1190

    TRANS 2PNP PREBIAS 0.5W SOT563
    NSBA114YDP6T5G

    Mfr.#: NSBA114YDP6T5G

    OMO.#: OMO-NSBA114YDP6T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SOT-963 DUAL PBRT
    NSBA114EF3T5G

    Mfr.#: NSBA114EF3T5G

    OMO.#: OMO-NSBA114EF3T5G-ON-SEMICONDUCTOR

    Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
    可用性
    库存:
    Available
    订购:
    1991
    输入数量:
    NSBA114TDXV6T1G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.34
    US$0.34
    10
    US$0.27
    US$2.66
    100
    US$0.14
    US$14.40
    1000
    US$0.11
    US$108.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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