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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA4 DISTI # V72:2272_06383493 | Infineon Technologies AG | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB80N06S2LH5ATMA4 DISTI # V36:1790_06383493 | Infineon Technologies AG | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB80N06S2L-H5 DISTI # IPB80N06S2L-H5-ND | Infineon Technologies AG | MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB80N06S2LH5ATMA4 DISTI # IPB80N06S2LH5ATMA4-ND | Infineon Technologies AG | MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB80N06S2LH5 DISTI # IPB80N06S2LH5 | Infineon Technologies AG | - Bulk (Alt: IPB80N06S2LH5) Min Qty: 404 Container: Bulk | Americas - 0 |
|
| IPB80N06S2LH5ATMA4 DISTI # IPB80N06S2LH5ATMA4 | Infineon Technologies AG | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2LH5ATMA4) Min Qty: 313 Container: Bulk | Americas - 0 |
|
| IPB80N06S2LH5ATMA4 DISTI # IPB80N06S2LH5ATMA4 | Infineon Technologies AG | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2LH5ATMA4) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB80N06S2LH5ATMA4 DISTI # 726-IPB80N06S2LH5AT4 | Infineon Technologies AG | MOSFET N-CHANNEL_55/60V RoHS: Compliant | 994 |
|
| IPB80N06S2L-H5 DISTI # 726-IPB80N06S2LH5 | Infineon Technologies AG | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS RoHS: Compliant | 0 | |
| IPB80N06S2LH5 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 5000 |
|
| IPB80N06S2LH5ATMA4 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 10000 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: IPB80N06S2LH5ATMA4 OMO.#: OMO-IPB80N06S2LH5ATMA4 |
MOSFET N-CHANNEL_55/60V |
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Mfr.#: IPB80N04S4L04ATMA1 OMO.#: OMO-IPB80N04S4L04ATMA1 |
MOSFET N-CHANNEL_30/40V |
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Mfr.#: IPB80N04S3H4ATMA1 OMO.#: OMO-IPB80N04S3H4ATMA1 |
MOSFET N-CHANNEL_30/40V |
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Mfr.#: IPB80N06S2L07ATMA3 |
MOSFET N-CH 55V 80A TO263-3 |
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Mfr.#: IPB80N04S2H4ATMA2 |
MOSFET N-CHANNEL_30/40V |
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Mfr.#: IPB80N06S2-07 OMO.#: OMO-IPB80N06S2-07-1190 |
MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS |
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Mfr.#: IPB80N06S3L-06 |
MOSFET N-CH 55V 80A TO-263 |
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Mfr.#: IPB80N06S407ATMA2 |
MOSFET N-CH 60V 80A TO263-3 |
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Mfr.#: IPB80N08S2-07 OMO.#: OMO-IPB80N08S2-07-1190 |
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS |
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Mfr.#: IPB80N06S2-H5 OMO.#: OMO-IPB80N06S2-H5-317 |
RF Bipolar Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS |
