SI2314EDS-T1-GE3

SI2314EDS-T1-GE3
Mfr. #:
SI2314EDS-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
生命周期:
制造商新产品。
数据表:
SI2314EDS-T1-GE3 数据表
交货:
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支付:
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HTML Datasheet:
SI2314EDS-T1-GE3 DatasheetSI2314EDS-T1-GE3 Datasheet (P4-P6)SI2314EDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SI2314EDS-T1-GE3 更多信息
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
Y
技术:
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI2
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SI2314EDS-GE3
单位重量:
0.000282 oz
Tags
SI2314E, SI2314, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 20V 3.77A SOT23-3
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3.77A; Drain Source Voltage Vds:20V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:950mV; Power Dissipation Pd:750mW ;RoHS Compliant: Yes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型号 制造商 描述 库存 价格
SI2314EDS-T1-GE3
DISTI # SI2314EDS-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 3.77A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.3350
SI2314EDS-T1-GE3
DISTI # SI2314EDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2314EDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3049
  • 6000:$0.2959
  • 12000:$0.2839
  • 18000:$0.2759
  • 30000:$0.2689
SI2314EDS-T1-GE3
DISTI # 781-SI2314EDS-GE3
Vishay IntertechnologiesMOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3050
SI2314EDS-T1-GE3Vishay Intertechnologies 3000
    图片 型号 描述
    SI2314EDS-T1-E3

    Mfr.#: SI2314EDS-T1-E3

    OMO.#: OMO-SI2314EDS-T1-E3

    MOSFET N-CHANNEL 20-V (D-S) MOSFET
    SI2314EDS-T1-GE3

    Mfr.#: SI2314EDS-T1-GE3

    OMO.#: OMO-SI2314EDS-T1-GE3

    MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
    SI2314EDS

    Mfr.#: SI2314EDS

    OMO.#: OMO-SI2314EDS-1190

    全新原装
    SI2314EDS-T1-E3

    Mfr.#: SI2314EDS-T1-E3

    OMO.#: OMO-SI2314EDS-T1-E3-VISHAY

    MOSFET N-CH 20V 3.77A SOT23-3
    SI2314EDS-T1-GE3

    Mfr.#: SI2314EDS-T1-GE3

    OMO.#: OMO-SI2314EDS-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
    可用性
    库存:
    Available
    订购:
    3000
    输入数量:
    SI2314EDS-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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