CGH09120F

CGH09120F
Mfr. #:
CGH09120F
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
生命周期:
制造商新产品。
数据表:
CGH09120F 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGH09120F 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓
获得:
21 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
120 V
Vgs - 栅源击穿电压:
- 10 V, 2 V
Id - 连续漏极电流:
28 A
输出功率:
20 W
最大漏栅电压:
28 V
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
Pd - 功耗:
56 W
安装方式:
螺丝安装
打包:
托盘
应用:
电信
配置:
单身的
工作频率:
910 MHz
工作温度范围:
- 40 C to + 150 C
品牌:
Wolfspeed / 克里
NF - 噪声系数:
3 dB
产品类别:
射频 JFET 晶体管
出厂包装数量:
50
子类别:
晶体管
Vgs th - 栅源阈值电压:
- 3 V
Tags
CGH0, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440095
***hardson RFPD
RF POWER TRANSISTOR
CGH09120F GaN High Electron Mobility Transistor
Wolfspeed / Cree CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain and wide bandwidth capabilities. This GaN HEMT allows for a high degree of DPD Correction to be applied making it ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is housed in a ceramic/metal flange package.Learn More
型号 制造商 描述 库存 价格
CGH09120F
DISTI # CGH09120F-ND
WolfspeedRF MOSFET HEMT 28V 440095
RoHS: Compliant
Min Qty: 1
Container: Tray
136In Stock
  • 1:$197.0000
CGH09120F
DISTI # 941-CGH09120F
Cree, Inc.RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
RoHS: Compliant
26
  • 1:$197.0000
图片 型号 描述
CGH09120F

Mfr.#: CGH09120F

OMO.#: OMO-CGH09120F

RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
CGH09120F 120W

Mfr.#: CGH09120F 120W

OMO.#: OMO-CGH09120F-120W-1190

全新原装
CGH09120FE

Mfr.#: CGH09120FE

OMO.#: OMO-CGH09120FE-1190

全新原装
CGH09120F

Mfr.#: CGH09120F

OMO.#: OMO-CGH09120F-WOLFSPEED

RF MOSFET HEMT 28V 440095
可用性
库存:
26
订购:
2009
输入数量:
CGH09120F的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$220.65
US$220.65
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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