2MBI200U4B-120-50

2MBI200U4B-120-50
Mfr. #:
2MBI200U4B-120-50
制造商:
FUJI
描述:
DUAL IGBT 200A 1200V 2MBI200U4B-120-50, EA
生命周期:
制造商新产品。
数据表:
2MBI200U4B-120-50 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
富士
产品分类
模块
Tags
2MBI200U4, 2MBI200U, 2MBI20, 2MBI2, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
French Electronic Distributor since 1988
***ark
DUAL IGBT MODULE 200A 1200V TRENCH; Module Configuration:1 Pair Series Connection; Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Max:1.04kW; Collector Emitter ;RoHS Compliant: Yes
***ment14 APAC
IGBT, DUAL, MODULE, 200A, 1200V; Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:1.04kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:300A; Current Temperature:25°C; External Depth:45mm; External Length / Height:30mm; External Width:92mm; Fall Time tf:410ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Module Configuration:Dual; No. of Transistors:2; Package / Case:M233; Power Dissipation Max:1.04kW; Power Dissipation Pd:1.04kW; Power Dissipation Pd:1.04kW; Pulsed Current Icm:600A; Rise Time:320ns; Termination Type:Screw; Voltage Vces:1.2kV
型号 制造商 描述 库存 价格
2MBI200U4B-120-50
DISTI # 462861
Fuji Electric Co LtdDUAL IGBT 200A 1200V 2MBI200U4B-120-50, EA66
  • 20:£70.1900
  • 10:£71.6200
  • 5:£74.2100
  • 2:£77.6500
  • 1:£86.2800
2MBI200U4B-120-50
DISTI # FE0000000000132
Fuji Electric Co LtdIGBT STD
RoHS: Compliant
0 in Stock0 on Order
  • 20:$143.6200
  • 1:$154.6600
2MBI200U4B-120-50-M
DISTI # FE0000000001921
Fuji Electric Co LtdIGBT STD
RoHS: Compliant
0 in Stock0 on Order
  • 12:$143.6200
  • 1:$154.6600
图片 型号 描述
2MBI200U2A-060

Mfr.#: 2MBI200U2A-060

OMO.#: OMO-2MBI200U2A-060-1190

IGBT STANDARD MODULE
2MBI200U2A-060-50

Mfr.#: 2MBI200U2A-060-50

OMO.#: OMO-2MBI200U2A-060-50-1190

IGBT, DUAL, MODULE, 200A, 600V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:660W, Collector Emitter Vol
2MBI200U2B-060

Mfr.#: 2MBI200U2B-060

OMO.#: OMO-2MBI200U2B-060-1190

全新原装
2MBI200U4B-120

Mfr.#: 2MBI200U4B-120

OMO.#: OMO-2MBI200U4B-120-1190

IGBT STANDARD MODULE
2MBI200U4B-120-50

Mfr.#: 2MBI200U4B-120-50

OMO.#: OMO-2MBI200U4B-120-50-1190

DUAL IGBT 200A 1200V 2MBI200U4B-120-50, EA
2MBI200U4H-120-50

Mfr.#: 2MBI200U4H-120-50

OMO.#: OMO-2MBI200U4H-120-50-1190

IGBT, 2 PACK MODULE 1200V, 200A, M234, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.05V, Power Dissipation Pd:1.04kW, Collector Emitter
2MBI200U4H-120E

Mfr.#: 2MBI200U4H-120E

OMO.#: OMO-2MBI200U4H-120E-1190

全新原装
2MBI200U4H-170

Mfr.#: 2MBI200U4H-170

OMO.#: OMO-2MBI200U4H-170-1190

300A, 1700V, N-CHANNEL IGBT
2MBI200UC-120

Mfr.#: 2MBI200UC-120

OMO.#: OMO-2MBI200UC-120-1190

全新原装
可用性
库存:
Available
订购:
5000
输入数量:
2MBI200U4B-120-50的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$215.43
US$215.43
10
US$204.66
US$2 046.58
100
US$193.89
US$19 388.70
500
US$183.12
US$91 557.75
1000
US$172.34
US$172 344.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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