AS1C2M16P-70BIN

AS1C2M16P-70BIN
Mfr. #:
AS1C2M16P-70BIN
制造商:
Alliance Memory
描述:
SRAM 32M 2Mx16 3V 70ns Pseudo SRAM IT
生命周期:
制造商新产品。
数据表:
AS1C2M16P-70BIN 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS1C2M16P-70BIN 更多信息
产品属性
属性值
制造商:
联盟记忆
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
32 Mbit
组织:
2 M x 16
访问时间:
70 ns
接口类型:
平行线
电源电压 - 最大值:
3.3 V
电源电压 - 最小值:
2.6 V
电源电流 - 最大值:
25 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
安装方式:
贴片/贴片
包装/案例:
FPBGA-48
打包:
托盘
内存类型:
静态随机存取存储器
系列:
AS1C2M16P-70
类型:
异步
品牌:
联盟记忆
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
364
子类别:
内存和数据存储
Tags
AS1C, AS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Pseudo SRAM
Alliance Memory Pseudo SRAM uses DRAM type memory cells, and has refresh-free operation and extreme low power consumption technology. The interface is compatible to a low power Asynchronous type SRAM. These devices are a variation of the industry-standard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality dramatically reduce the required signal count, and increases read/write bandwidth.
型号 制造商 描述 库存 价格
AS1C2M16P-70BIN
DISTI # 1450-1477-ND
Alliance Memory Inc32M PSRAM 48 BGA 3V
RoHS: Compliant
Min Qty: 1
Container: Tray
338In Stock
  • 5096:$1.9136
  • 1092:$2.1149
  • 728:$2.2708
  • 364:$2.2793
  • 100:$2.3559
  • 50:$2.6366
  • 25:$2.6436
  • 10:$2.6860
  • 1:$2.9900
AS1C2M16P-70BIN
DISTI # AS1C2M16P-70BIN
Alliance Memory IncPSEUDO SRAM 32Mbit 2M x 16 2.6V to 3.3V 70ns 48-Ball FPBGA Tray - Trays (Alt: AS1C2M16P-70BIN)
Min Qty: 364
Container: Tray
Americas - 0
  • 2184:$1.5900
  • 3640:$1.5900
  • 364:$1.6900
  • 728:$1.6900
  • 1456:$1.6900
AS1C2M16P-70BIN
DISTI # 913-AS1C2M16P-70BIN
Alliance Memory IncSRAM 32M 2Mx16 3V 70ns Pseudo SRAM IT
RoHS: Compliant
364
  • 1:$3.1300
  • 10:$2.8100
  • 25:$2.7700
  • 50:$2.7600
  • 100:$2.4600
  • 250:$2.3800
  • 500:$2.3700
  • 1000:$2.2100
  • 2000:$2.0800
AS1C2M16P-70BINTR
DISTI # 913-AS1C2M16P-70BINT
Alliance Memory IncSRAM 32M 2Mx16 3V 70ns Pseudo SRAM IT
RoHS: Compliant
0
  • 2000:$2.0800
图片 型号 描述
AT27C256R-45PU

Mfr.#: AT27C256R-45PU

OMO.#: OMO-AT27C256R-45PU

EPROM 256Kb (32Kx8) OTP 5V 45ns
IS66WVE2M16EBLL-70BLI

Mfr.#: IS66WVE2M16EBLL-70BLI

OMO.#: OMO-IS66WVE2M16EBLL-70BLI

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EBLL-70BLI

Mfr.#: IS66WVE2M16EBLL-70BLI

OMO.#: OMO-IS66WVE2M16EBLL-70BLI-INTEGRATED-SILICON-SOLUTION

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
AT27C256R-45PU

Mfr.#: AT27C256R-45PU

OMO.#: OMO-AT27C256R-45PU-MICROCHIP-TECHNOLOGY

EPROM 256Kb (32Kx8) OTP 5V 45ns
可用性
库存:
363
订购:
2346
输入数量:
AS1C2M16P-70BIN的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$3.13
US$3.13
10
US$2.81
US$28.10
25
US$2.77
US$69.25
50
US$2.76
US$138.00
100
US$2.46
US$246.00
250
US$2.38
US$595.00
500
US$2.37
US$1 185.00
1000
US$2.21
US$2 210.00
2000
US$2.08
US$4 160.00
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