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SI3900DV-T1-GE3

SI3900DV-T1-GE3
Mfr. #:
SI3900DV-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds 12V Vgs TSOP-6
生命周期:
制造商新产品。
数据表:
SI3900DV-T1-GE3 数据表
交货:
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支付:
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HTML Datasheet:
SI3900DV-T1-GE3 DatasheetSI3900DV-T1-GE3 Datasheet (P4-P6)SI3900DV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SI3900DV-T1-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
商品名：
沟槽场效应晶体管
打包：
卷轴
系列：
SI3
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SI3900DV-GE3
单位重量：
0.000705 oz
Tags
SI3900DV-T, SI3900, SI390, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI3900DV-T1-GE3 Dual N-channel MOSFET Transistor; 2 A; 20 V; 6-Pin TSOP
***ical
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI3900DV-T1-GE3
DISTI # 32748690		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.2754
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5987In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3763
  • 6000:$0.3910
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # V36:1790_09216710		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.3818
  • 1500000:$0.3820
  • 300000:$0.3925
  • 30000:$0.4090
  • 3000:$0.4116
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.2249
  • 18000:€0.2419
  • 12000:€0.2619
  • 6000:€0.3039
  • 3000:€0.4459
SI3900DV-T1-GE3
DISTI # SI3900DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3579
  • 18000:$0.3679
  • 12000:$0.3789
  • 6000:$0.3949
  • 3000:$0.4069
SI3900DV-T1-GE3
DISTI # 35R0064		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 10000:$0.3560
  • 6000:$0.3640
  • 4000:$0.3780
  • 2000:$0.4200
  • 1000:$0.4620
  • 1:$0.4820
SI3900DV-T1-GE3
DISTI # 35R6229		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 2.4A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 1000:$0.4240
  • 500:$0.5380
  • 250:$0.5820
  • 100:$0.6250
  • 50:$0.7200
  • 25:$0.8150
  • 1:$0.9900
SI3900DV-T1-GE3
DISTI # 70616165		Vishay SiliconixSI3900DV-T1-GE3 Dual N-channel MOSFET Transistor,2 A,20 V,6-Pin TSOP
RoHS: Compliant		0
  • 300:$0.6000
  • 600:$0.5000
  • 1500:$0.4600
  • 3000:$0.3800
SI3900DV-T1-GE3
DISTI # 781-SI3900DV-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant		2949
  • 1:$0.9700
  • 10:$0.8060
  • 100:$0.6180
  • 500:$0.5320
  • 1000:$0.4190
  • 3000:$0.3910
  • 6000:$0.3720
  • 9000:$0.3640
SI3900DV-T1-GE3
DISTI # 8123170P		Vishay IntertechnologiesTRANS MOSFET N-CH 20V 2A, RL2360
  • 1500:£0.3940
  • 760:£0.4280
  • 160:£0.4650
SI3900DV-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs TSOP-6
RoHS: Compliant		Americas -
  • 3000:$0.3980
  • 6000:$0.3780
  • 12000:$0.3660
  • 18000:$0.3560
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可用性
库存:
Available
订购:
1985
输入数量:
SI3900DV-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.97
US$0.97
10
US$0.81
US$8.06
100
US$0.62
US$61.80
500
US$0.53
US$266.00
1000
US$0.42
US$419.00
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