We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| RFD8P06LESM9A DISTI # RFD8P06LESM9A | ON Semiconductor | - Bulk (Alt: RFD8P06LESM9A) Min Qty: 1 Container: Bulk | Americas - 0 | |
| RFD8P06LE | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 7200 |
|
| RFD8P06LE | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1753 |
|
| RFD8P06LESM | Harris Semiconductor | 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | 10 |
|
| RFD8P06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 4627 |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05 |
MOSFET TO-251AA P-Ch Power |
|
Mfr.#: RFD802 OMO.#: OMO-RFD802-1190 |
全新原装 |
|
|
Mfr.#: RFD8P03 OMO.#: OMO-RFD8P03-1190 |
全新原装 |
|
|
Mfr.#: RFD8P03LSM OMO.#: OMO-RFD8P03LSM-1190 |
全新原装 |
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR |
MOSFET P-CH 50V 8A I-PAK |
|
|
Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06 OMO.#: OMO-RFD8P06-1190 |
全新原装 |
|
|
Mfr.#: RFD8P06E OMO.#: OMO-RFD8P06E-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06ESM OMO.#: OMO-RFD8P06ESM-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
