SI4563DY-T1-GE3

SI4563DY-T1-GE3
Mfr. #:
SI4563DY-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4563DY-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
沟槽FETR
打包
卷带 (TR)
包装盒
8-SOIC (0.154", 3.90mm Width)
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
供应商-设备-包
8-SO
FET型
N 和 P 沟道
最大功率
3.25W
漏源电压 Vdss
40V
输入电容-Ciss-Vds
2390pF @ 20V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
16 mOhm @ 5A, 10V
Vgs-th-Max-Id
2V @ 250μA
栅极电荷-Qg-Vgs
85nC @ 10V
Tags
SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:NPN & PNP; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
***ment14 APAC
NPN & PNP MOSFET, SOIC; Transistor Polar; NPN & PNP MOSFET, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V; Drain Source Voltage Vds, P Channel:-40V
型号 制造商 描述 库存 价格
SI4563DY-T1-GE3
DISTI # SI4563DY-T1-GE3-ND
Vishay SiliconixMOSFET N/P-CH 40V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4563DY-T1-GE3
    DISTI # 781-SI4563DY-GE3
    Vishay IntertechnologiesMOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
    RoHS: Compliant
    0
      图片 型号 描述
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
      SI4563DY-T1-E3

      Mfr.#: SI4563DY-T1-E3

      OMO.#: OMO-SI4563DY-T1-E3-VISHAY

      MOSFET N/P-CH 40V 8A 8-SOIC
      可用性
      库存:
      Available
      订购:
      2000
      输入数量:
      SI4563DY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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