IHW30N60T

Mfr. #:: IHW30N60T
制造商:: Rochester Electronics, LLC
描述:: IGBT Transistors LOW LOSS DuoPack 600V 30A
生命周期:: 制造商新产品。
数据表:: IHW30N60T 数据表
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产品属性
属性值

制造商: 英飞凌

产品分类: IGBT - 单

系列: IHW30N60

打包: 管子

部分别名: IHW30N60TFKSA1 IHW30N60TXK SP000076306

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

配置: 单身的

钯功耗: 187 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 1.5 V

25-C 时的连续集电极电流: 30 A

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 30 A

Tags: IHW30N60T, IHW30N60, IHW30N6, IHW30N, IHW3, IHW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW30N60T 描述

***ineon SCT: IGBT 600V in TRENCHSTOP™ and Fieldstop technology with optimised diode, PG-TO247-3, RoHS

***ical: Trans IGBT Chip N=-CH 600V 30A 187000mW 3-Pin(3+Tab) TO-247 Tube

***i-Key Marketplace: IHW30N60 - DISCRETE IGBT WITH AN

***ineon: IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price

Market price

型号	制造商	描述	库存	价格
IHW30N60TFKSA1 DISTI # IHW30N60TFKSA1-ND	Infineon Technologies AG	IGBT 600V 60A 187W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IHW30N60T DISTI # IHW30N60T	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 30A 3-Pin TO-247 Tube - Bulk (Alt: IHW30N60T) RoHS: Not Compliant Min Qty: 173 Container: Bulk	Americas - 0	173:$2.5900 175:$2.4900 348:$2.3900 865:$2.2900 1730:$2.1900
IHW30N60T DISTI # SP000076306	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 30A 3-Pin TO-247 Tube (Alt: SP000076306) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.8900 10:€1.8900 25:€1.8900 50:€1.7900 100:€1.6900 500:€1.6900 1000:€1.6900
IHW30N60T DISTI # 726-IHW30N60T	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 600V 30A RoHS: Compliant	81	1:$4.0600 10:$3.2600 100:$2.9700 250:$2.6800 500:$2.4100
IHW30N60T	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	74	1000:$1.9100 500:$2.0100 100:$2.0900 25:$2.1800 1:$2.3500

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