FJP5027OTU

FJP5027OTU
Mfr. #:
FJP5027OTU
制造商:
ON Semiconductor / Fairchild
描述:
Bipolar Transistors - BJT NPN 1100V/3A
生命周期:
制造商新产品。
数据表:
FJP5027OTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-220-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
800 V
集电极-基极电压 VCBO:
1.1 kV
发射极基极电压 VEBO:
7 V
最大直流集电极电流:
3 A
增益带宽积 fT:
15 MHz
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
FJP5027
高度:
9.4 mm
长度:
10.1 mm
打包:
管子
宽度:
4.7 mm
品牌:
安森美半导体/飞兆半导体
连续集电极电流:
1.5 A
DC 集电极/基极增益 hfe 最小值:
20
Pd - 功耗:
50 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
1000
子类别:
晶体管
第 # 部分别名:
FJP5027OTU_NL
单位重量:
0.063493 oz
Tags
FJP5027, FJP50, FJP5, FJP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FJP5027 Series 800 V 3 A Through Hole NPN Silicon Transistor - TO-220-3
*** Stop Electro
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
***enic
10Ã×A 800V 50W 3A 10@200mA5V 15MHz NPN [email protected] +150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
*** Electronic Components
Bipolar Transistors - BJT NPN 1100V/3A
***ment14 APAC
Transistor, NPN, 800V, 3A, 50W, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:15MHz; Power
***nell
TRANS, NPN, 800V, 3A, 50W, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: 15MHz; Power Dissipation Pd: 50W; DC Collector Current: 3A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
FJPF Series NPN 40 W 800 V 3 A Flange Mount Power Transistor - TO-220F
***Yang
Trans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Silicon Trans
***enic
10Ã×A 800V 40W 3A 10@200mA5V 15MHz NPN [email protected] +150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
***ical
Trans GP BJT NPN 800V 3A 40000mW 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN 11 00V/3A
***enic
10Ã×A 800V 40W 3A 15@200mA5V 15MHz NPN [email protected] +150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
***ical
Trans GP BJT NPN 800V 5A 40000mW 3-Pin(3+Tab) TO-220F Rail
***emi
5.0 A, 800 V ESBC Rated NPN Power Bipolar Junction Transistor
***r Electronics
Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN ESBC/5A/800V TO-220F
***enic
800V 40W 5A 20@200mA5V 15MHz NPN [email protected] -55¡Í~+125¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
***rchild Semiconductor
The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance whenused in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignitionswitches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220F package.
***Yang
Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Through Hole TO-220-3 - Bulk
***ical
Trans GP BJT NPN 600V 4A 3-Pin(3+Tab) TO-220 Rail
***-Wing Technology
POWER BIPOLAR TRANSISTOR, NPN
***i-Key Marketplace
TRANS NPN 600V 4A TO220-3
***et
Bipolar (BJT) Transistor NPN 750V 6A 40W Through Hole TO-220F
***i-Key Marketplace
TRANS NPN 750V 6A TO220F-3
型号 制造商 描述 库存 价格
FJP5027OTU
DISTI # FJP5027OTU-ND
ON SemiconductorTRANS NPN 800V 3A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1706In Stock
  • 1000:$0.4868
  • 500:$0.6167
  • 100:$0.7465
  • 10:$0.9570
  • 1:$1.0700
FJP5027OTU
DISTI # FJP5027OTU
ON SemiconductorTrans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: FJP5027OTU)
RoHS: Compliant
Min Qty: 2000
Container: Tube
Americas - 0
  • 2000:$0.3509
  • 4000:$0.3489
  • 6000:$0.3439
  • 10000:$0.3399
  • 20000:$0.3309
FJP5027OTU
DISTI # FJP5027OTU
ON SemiconductorTrans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220 T/R (Alt: FJP5027OTU)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Asia - 0
  • 2000:$0.4269
  • 4000:$0.4105
  • 6000:$0.3953
  • 10000:$0.3811
  • 20000:$0.3680
  • 50000:$0.3557
  • 100000:$0.3499
FJP5027OTU
DISTI # 60J0670
ON SemiconductorNPN,1100V/3A ROHS COMPLIANT: YES0
  • 1:$1.2800
  • 10:$0.9960
  • 100:$0.7020
  • 1000:$0.4860
  • 2000:$0.4700
  • 10000:$0.4490
  • 24000:$0.4330
  • 50000:$0.4210
FJP5027OTU
DISTI # 512-FJP5027OTU
ON SemiconductorBipolar Transistors - BJT NPN 1100V/3A
RoHS: Compliant
1721
  • 1:$1.0200
  • 10:$0.8660
  • 100:$0.6650
  • 500:$0.5880
  • 1000:$0.4640
  • 2000:$0.4120
  • 10000:$0.3960
图片 型号 描述
GRM21A7U2E681JW31D

Mfr.#: GRM21A7U2E681JW31D

OMO.#: OMO-GRM21A7U2E681JW31D-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 680pF 250Volts 5%
CRCW06037K50FKEAC

Mfr.#: CRCW06037K50FKEAC

OMO.#: OMO-CRCW06037K50FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 7K5 1% ET1
CR0603-FX-2371ELF

Mfr.#: CR0603-FX-2371ELF

OMO.#: OMO-CR0603-FX-2371ELF-BOURNS

Thick Film Resistors - SMD 2.37K ohm 1%
12062A102KAT2A

Mfr.#: 12062A102KAT2A

OMO.#: OMO-12062A102KAT2A-1105

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1000pF 200volts C0G 10%
ELXZ250ETD331MJC5S

Mfr.#: ELXZ250ETD331MJC5S

OMO.#: OMO-ELXZ250ETD331MJC5S-UNITED-CHEMI-CON

Aluminum Electrolytic Capacitors - Leaded 330UF 25V
RC0603FR-0710KL

Mfr.#: RC0603FR-0710KL

OMO.#: OMO-RC0603FR-0710KL-YAGEO

Thick Film Resistors - SMD 10K OHM 1%
UHV1V561MPD

Mfr.#: UHV1V561MPD

OMO.#: OMO-UHV1V561MPD-NICHICON

Aluminum Electrolytic Capacitors - Leaded 35volts 560uF 105c 10x20 5LS
RK73H2BTTD2554F

Mfr.#: RK73H2BTTD2554F

OMO.#: OMO-RK73H2BTTD2554F-1090

Thick Film Resistors - SMD 2.55M OHM 1%
ERJ-12ZYJ753U

Mfr.#: ERJ-12ZYJ753U

OMO.#: OMO-ERJ-12ZYJ753U-PANASONIC

Thick Film Resistors - SMD 2010 75Kohms 5% Tolerance
可用性
库存:
971
订购:
2954
输入数量:
FJP5027OTU的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.96
US$0.96
10
US$0.82
US$8.21
100
US$0.63
US$63.00
500
US$0.56
US$278.50
1000
US$0.44
US$439.00
2000
US$0.39
US$780.00
10000
US$0.38
US$3 750.00
25000
US$0.36
US$9 075.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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