FD1000R17IE4BOSA2

Mfr. #:: FD1000R17IE4BOSA2
制造商:: Infineon Technologies
描述:: IGBT MODULE VCES 1700V 1000A
生命周期:: 制造商新产品。
数据表:: FD1000R17IE4BOSA2 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

Tags: FD1000R1, FD1000R, FD1000, FD100, FD10, FD1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FD1000R17IE4BOSA2 描述

***et Europe: Trans IGBT Module N-CH 1.7KV 1390A 12-pin PRIME3-1

***ment14 APAC: IGBT, HI PO CHOP, 1700V, 1000A, PRIM; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:6.25kW

***ineon: 1700V PrimePACK3 chopper IGBT module with IGBT4 and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Current Density; Low Switching Losses; V(vj op) = 150C; Low V(cesat); Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Copper Base Plate; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups

Market price

型号	制造商	描述	库存	价格
FD1000R17IE4BOSA2 DISTI # FD1000R17IE4BOSA2-ND	Infineon Technologies AG	IGBT MODULE VCES 1700V 1000A RoHS: Not compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$540.0850
FD1000R17IE4BOSA2 DISTI # FD1000R17IE4BOSA2	Infineon Technologies AG	INDUSTRY - Bulk (Alt: FD1000R17IE4BOSA2) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1000:$481.4900 500:$490.2900 100:$507.2900 50:$526.3900 25:$533.7900 10:$541.3900 1:$549.1900
FD1000R17IE4BOSA2 DISTI # FD1000R17IE4BOSA2	Infineon Technologies AG	INDUSTRY - Trays (Alt: FD1000R17IE4BOSA2) RoHS: Compliant Min Qty: 2 Container: Tray	Americas - 0
FD1000R17IE4 DISTI # 641-FD1000R17IE4	Infineon Technologies AG	IGBT Modules IGBT 1700V 1000A	0	1:$548.2400 5:$515.2000
FD1000R17IE4BOSA2	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel RoHS: Compliant	2	1000:$498.7000 500:$524.9500 100:$546.5200 25:$569.9400 1:$613.7800

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