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FDD7N60NZTM

FDD7N60NZTM
Mfr. #:
FDD7N60NZTM
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET N-Channel 600V 5.5A
生命周期:
制造商新产品。
数据表:
FDD7N60NZTM 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
5.5 A
Rds On - 漏源电阻：
1.05 Ohms
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
90 W
配置：
单身的
打包：
卷轴
高度：
2.39 mm
长度：
6.73 mm
系列：
FDD7N60NZ
晶体管类型：
1 N-Channel
宽度：
6.22 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
MOSFET
出厂包装数量：
2500
子类别：
MOSFET
单位重量：
0.009184 oz
Tags
FDD7N, FDD7, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 600V, 5.5A, TO-251AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.05oh; Available until stocks are exhausted Alternative available
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
型号 制造商 描述 库存 价格
FDD7N60NZTM
DISTI # V79:2366_17783585		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R27500
  • 2500:$0.4305
  • 1000:$0.4335
  • 500:$0.5689
  • 100:$0.6304
  • 10:$0.9149
  • 1:$1.0624
FDD7N60NZTM
DISTI # V72:2272_06337724		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R1080
  • 1000:$0.4273
  • 500:$0.5672
  • 250:$0.6237
  • 100:$0.6308
  • 25:$0.7582
  • 10:$0.9266
  • 1:$1.0782
FDD7N60NZTM
DISTI # V36:1790_06337724		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.3535
  • 1250000:$0.3538
  • 250000:$0.3834
  • 25000:$0.4371
  • 2500:$0.4461
FDD7N60NZTM
DISTI # FDD7N60NZTMCT-ND		ON SemiconductorMOSFET N-CH 600V 5.5A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1913In Stock
  • 1000:$0.4924
  • 500:$0.6237
  • 100:$0.7550
  • 10:$0.9680
  • 1:$1.0800
FDD7N60NZTM
DISTI # FDD7N60NZTMDKR-ND		ON SemiconductorMOSFET N-CH 600V 5.5A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1913In Stock
  • 1000:$0.4924
  • 500:$0.6237
  • 100:$0.7550
  • 10:$0.9680
  • 1:$1.0800
FDD7N60NZTM
DISTI # FDD7N60NZTMTR-ND		ON SemiconductorMOSFET N-CH 600V 5.5A DPAK-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.4079
  • 5000:$0.4238
  • 2500:$0.4461
FDD7N60NZTM
DISTI # 26114050		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R27500
  • 31:$1.0624
FDD7N60NZTM
DISTI # 26637087		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R7500
  • 2500:$0.4461
FDD7N60NZTM
DISTI # 26703053		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R1080
  • 17:$1.0782
FDD7N60NZTM
DISTI # FDD7N60NZTM		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin DPAK T/R - Bulk (Alt: FDD7N60NZTM)
RoHS: Not Compliant
Min Qty: 596
Container: Bulk		Americas - 0
  • 5960:$0.5179
  • 2980:$0.5309
  • 1788:$0.5379
  • 1192:$0.5449
  • 596:$0.5489
FDD7N60NZTM
DISTI # FDD7N60NZTM		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin DPAK T/R (Alt: FDD7N60NZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3769
  • 15000:€0.4059
  • 10000:€0.4389
  • 5000:€0.4789
  • 2500:€0.5859
FDD7N60NZTM
DISTI # FDD7N60NZTM		ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin DPAK T/R - Tape and Reel (Alt: FDD7N60NZTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3739
  • 15000:$0.3839
  • 10000:$0.3889
  • 5000:$0.3939
  • 2500:$0.3959
FDD7N60NZTM
DISTI # 54T8322		ON SemiconductorUF2 600V 1.25OHM DPAK / REEL0
  • 25000:$0.4940
  • 10000:$0.5090
  • 2500:$0.5280
  • 1:$0.5320
FDD7N60NZTM
DISTI # 46AC8815		ON SemiconductorMOSFET, N-CH, 600V, 5.5A, TO-251AA,Transistor Polarity:N Channel,Continuous Drain Current Id:5.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes2410
  • 1000:$0.6870
  • 500:$0.8450
  • 250:$0.8950
  • 100:$0.9440
  • 50:$1.0300
  • 25:$1.1200
  • 10:$1.2000
  • 1:$1.3900
FDD7N60NZTM
DISTI # 512-FDD7N60NZTM		ON SemiconductorMOSFET N-Channel 600V 5.5A
RoHS: Compliant		1383
  • 1:$0.9900
  • 10:$0.8490
  • 100:$0.6520
  • 500:$0.5760
  • 1000:$0.4550
  • 2500:$0.4340
FDD7N60NZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant		65753
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
FDD7N60NZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant		2500
    FDD7N60NZTM
    DISTI # 2829468    		ON SemiconductorMOSFET, N-CH, 600V, 5.5A, TO-251AA
    RoHS: Compliant    		2410
    • 500:$0.8720
    • 250:$1.0700
    • 100:$1.3000
    • 25:$1.9000
    • 5:$2.2200
    FDD7N60NZTM
    DISTI # 2829468    		ON SemiconductorMOSFET, N-CH, 600V, 5.5A, TO-251AA2410
    • 500:£0.4390
    • 250:£0.4680
    • 100:£0.4970
    • 10:£0.7020
    • 1:£0.8630
    图片 型号 描述
    BTA212X-800B,127

    Mfr.#: BTA212X-800B,127

    OMO.#: OMO-BTA212X-800B-127

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    STD2HNK60Z

    Mfr.#: STD2HNK60Z

    OMO.#: OMO-STD2HNK60Z

    		 MOSFET N Ch 600V Zener SuprMESH 4.4 A
    STD7N60M2

    Mfr.#: STD7N60M2

    OMO.#: OMO-STD7N60M2

    		 MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
    ECW-FE2W104K

    Mfr.#: ECW-FE2W104K

    OMO.#: OMO-ECW-FE2W104K

    		 Film Capacitors 0.1uF 450VDC 10% MPP L/S=10mm
    860010675016

    Mfr.#: 860010675016

    OMO.#: OMO-860010675016

    		 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG8 50V 150uF 20% ESR=585mOhms
    STD2HNK60Z

    Mfr.#: STD2HNK60Z

    OMO.#: OMO-STD2HNK60Z-STMICROELECTRONICS

    		 MOSFET N-CH 600V 2A DPAK
    STD7N60M2

    Mfr.#: STD7N60M2

    OMO.#: OMO-STD7N60M2-STMICROELECTRONICS

    		 MOSFET N-CH 600V DPAK
    SRR1280-102K

    Mfr.#: SRR1280-102K

    OMO.#: OMO-SRR1280-102K-BOURNS

    		 Fixed Inductors 1000uH 10% SMD 1280
    BTA212X-800B,127

    Mfr.#: BTA212X-800B,127

    OMO.#: OMO-BTA212X-800B-127-WEEN-SEMICONDUCTORS

    		 Triacs RAIL TRIAC
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    FDD7N60NZTM的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.99
    US$0.99
    10
    US$0.85
    US$8.49
    100
    US$0.65
    US$65.20
    500
    US$0.58
    US$288.00
    1000
    US$0.46
    US$455.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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