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IXXN110N65C4H1

IXXN110N65C4H1
Mfr. #:
IXXN110N65C4H1
制造商:
Littelfuse
描述:
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
生命周期:
制造商新产品。
数据表:
IXXN110N65C4H1 数据表
交货:
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HTML Datasheet:
IXXN110N65C4H1 DatasheetIXXN110N65C4H1 Datasheet (P4-P6)IXXN110N65C4H1 Datasheet (P7)
ECAD Model:
更多信息:
IXXN110N65C4H1 更多信息
产品属性
属性值
制造商：
IXYS
产品分类：
IGBT 模块
RoHS：
Y
产品：
IGBT 硅模块
配置：
单双发射器
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.98 V
25 C 时的连续集电极电流：
210 A
栅极-发射极漏电流：
100 nA
Pd - 功耗：
750 W
包装/案例：
SOT-227B-4
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
打包：
管子
系列：
IXXN110N65
品牌：
IXYS
安装方式：
贴片/贴片
最大栅极发射极电压：
20 V
产品类别：
IGBT 模块
出厂包装数量：
10
子类别：
IGBT
商品名：
XPT
单位重量：
1.058219 oz
Tags
IXXN1, IXXN, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B
***roFlash
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
***ical
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
***el Electronic
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
***i-Key
IGBT MOD 650V 210A 750W SOT227B
IGBT Modules
Littelfuse IGBT Modules offer a comprehensive portfolio. The Littelfuse IGBT Modules range from phase legs to six-packs and everything in between. This makes Littelfuse able to accommodate a wide array of topology and package requirements.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
型号 制造商 描述 库存 价格
IXXN110N65C4H1
DISTI # IXXN110N65C4H1-ND		IXYS CorporationIGBT 650V 210A 750W SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		375In Stock
  • 250:$17.3260
  • 100:$18.8794
  • 30:$20.3133
  • 10:$22.1060
  • 1:$23.9000
IXXN110N65C4H1
DISTI # 747-IXXN110N65C4H1		IXYS CorporationIGBT Modules 650V/234A Trench IGBT GenX4 XPT
RoHS: Compliant		1973
  • 1:$23.9000
  • 5:$22.7600
  • 10:$22.1100
  • 25:$20.3200
  • 50:$19.4600
  • 100:$18.8800
  • 200:$17.3300
IXXN110N65C4H1IXYS Corporation 20
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    可用性
    库存:
    310
    订购:
    2293
    输入数量:
    IXXN110N65C4H1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$23.90
    US$23.90
    5
    US$22.76
    US$113.80
    10
    US$22.10
    US$221.00
    25
    US$20.31
    US$507.75
    50
    US$19.46
    US$973.00
    100
    US$18.87
    US$1 887.00
    200
    US$17.32
    US$3 464.00
    500
    US$16.13
    US$8 065.00
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