TC58BYG0S3HBAI6

Mfr. #:: TC58BYG0S3HBAI6
制造商:: Toshiba Memory
描述:: NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
生命周期:: 制造商新产品。
数据表:: TC58BYG0S3HBAI6 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商：: 东芝

产品分类：: NAND闪存

RoHS：: Y

安装方式：: 贴片/贴片

包装/案例：: VFBGA-67

内存大小：: 1 Gbit

接口类型：: 平行线

组织：: 128 M x 8

数据总线宽度：: 8 bit

电源电压 - 最小值：: 1.7 V

电源电压 - 最大值：: 1.95 V

最低工作温度：: - 40 C

最高工作温度：: + 85 C

打包：: 托盘

内存类型：: NAND

品牌：: 东芝内存

湿气敏感：: 是的

产品类别：: NAND闪存

出厂包装数量：: 338

子类别：: 内存和数据存储

Tags: TC58BYG0S3HB, TC58BYG0S3, TC58BYG0, TC58BY, TC58B, TC58, TC5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TC58BYG0S3HBAI6 描述

***ical: NAND Flash Parallel 1.8V 1G-bit 128M x 8 67-Pin VFBGA

***ronik: BENAND-Flash 128Mx8 1.8V BGA67

***et: 1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V

*** Americas: 1Gb BE nand 1.8V Industrial BGA(6.5*8) 24nm

Market price

型号	制造商	描述	库存	价格
TC58BYG0S3HBAI6 DISTI # V99:2348_18852246	Toshiba America Electronic Components	NAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA	338	1000:$1.7700 500:$1.9270 250:$2.1420 100:$2.2740 50:$2.5030 10:$2.5470 1:$2.7870
TC58BYG0S3HBAI6 DISTI # TC58BYG0S3HBAI6-ND	Toshiba Semiconductor and Storage Products	IC FLASH 1G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 1 Container: Tray	338In Stock	1014:$2.2716 676:$2.4390 338:$2.4482 100:$2.5304 50:$2.8318 25:$2.8396 10:$2.8850 1:$3.2100
TC58BYG0S3HBAI6 DISTI # TC58BYG0S3HBAI6	Toshiba America Electronic Components	1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V (Alt: TC58BYG0S3HBAI6) RoHS: Compliant Min Qty: 1690	Asia - 0
TC58BYG0S3HBAI6 DISTI # TC58BYG0S3HBAI6	Toshiba America Electronic Components	1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG0S3HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray	Americas - 0	338:$2.1900 676:$2.1900 1352:$2.0900 2028:$2.0900 3380:$2.0900
TC58BYG0S3HBAI6 DISTI # 757-TC58BYG0S3HBAI6	Toshiba America Electronic Components	NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) RoHS: Compliant	359	1:$3.0600 10:$2.7500 50:$2.7000 100:$2.4100 250:$2.3400 500:$2.3300 1000:$2.1700 2500:$2.1300

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