IPB60R520CP

Mfr. #:: IPB60R520CP
制造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP
生命周期:: 制造商新产品。
数据表:: IPB60R520CP 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS CP

打包: 卷轴

部分别名: IPB60R520CPATMA1 SP000405868

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 酷摩

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 66 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 16 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 6.8 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 520 mOhms

晶体管极性: N通道

典型关断延迟时间: 74 ns

典型开启延迟时间: 17 ns

通道模式: 增强

Tags: IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R520CP 描述

***et: Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) TO-263

***ark: MOSFET, N CHANNEL, 650V, 6.8A, TO-263

***i-Key: MOSFET N-CH 650V 6.8A TO-263

***ment14 APAC: MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-263; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-263; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

Market price

型号	制造商	描述	库存	价格
IPB60R520CPATMA1 DISTI # IPB60R520CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R520CPATMA1 DISTI # IPB60R520CPATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB60R520CPATMA1 DISTI # IPB60R520CPATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB60R520CP DISTI # 33P7139	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 6.8A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.47ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0
IPB60R520CP	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	12996	1000:$0.8100 500:$0.8500 100:$0.8900 25:$0.9200 1:$1.0000
IPB60R520CP DISTI # 726-IPB60R520CP	Infineon Technologies AG	MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP RoHS: Compliant	132	1:$2.4100 10:$1.8600 100:$1.6900 250:$1.5200 500:$1.3100 1000:$1.1000 2000:$0.9190 5000:$0.8990

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